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	Defect modification in ZnInSnO transistor with solution-processed Al2O3 dielectric by annealing
	Xu, Yunlong[1]; Li, Xifeng[2]; Zhu, Leyong[3]; Zhang, Jianhua[4]
刊名	MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
	2016
卷号	46页码:23-28
关键词	Annealing Interface Density of states Two-dimensional numerical simulation
ISSN号	1369-8001
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2236120
专题	上海大学
作者单位	1.[1]Shanghai Univ, Minist Educ, Key Lab Adv Display & Syst Applicat, Shanghai 200072, Peoples R China. 2.[2]Shanghai Univ, Minist Educ, Key Lab Adv Display & Syst Applicat, Shanghai 200072, Peoples R China. 3.[3]Shanghai Univ, Minist Educ, Key Lab Adv Display & Syst Applicat, Shanghai 200072, Peoples R China. 4.[4]Shanghai Univ, Minist Educ, Key Lab Adv Display & Syst Applicat, Shanghai 200072, Peoples R China.
推荐引用方式 GB/T 7714	Xu, Yunlong[1],Li, Xifeng[2],Zhu, Leyong[3],et al. Defect modification in ZnInSnO transistor with solution-processed Al2O3 dielectric by annealing[J]. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,2016,46:23-28.
APA	Xu, Yunlong[1],Li, Xifeng[2],Zhu, Leyong[3],&Zhang, Jianhua[4].(2016).Defect modification in ZnInSnO transistor with solution-processed Al2O3 dielectric by annealing.MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,46,23-28.
MLA	Xu, Yunlong[1],et al."Defect modification in ZnInSnO transistor with solution-processed Al2O3 dielectric by annealing".MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 46(2016):23-28.

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