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	Synaptic devices based on purely electronic memristors
	Pan, Ruobing[1]; Li, Jun[2]; Zhuge, Fei[3]; Zhu, Liqiang[4]; Liang, Lingyan[5]; Zhang, Hongliang[6]; Gao, Junhua[7]; Cao, Hongtao[8]; Fu, Bing[9]; Li, Kang[10]
刊名	APPLIED PHYSICS LETTERS
	2016
卷号	108
ISSN号	0003-6951
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2235169
专题	上海大学
作者单位	1.[1]Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China. 2.Shanghai Univ, Sch Mat Sci & Engn, Inst Mat Sci, Shanghai 200072, Peoples R China. 3.[2]Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China. 4.[3]Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China. 5.[4]Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China. 6.[5]Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China. 7.[6]Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China. 8.[7]Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China. 9.[8]Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China. 10.[9]Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Zhejiang, Peoples R China.
推荐引用方式 GB/T 7714	Pan, Ruobing[1],Li, Jun[2],Zhuge, Fei[3],et al. Synaptic devices based on purely electronic memristors[J]. APPLIED PHYSICS LETTERS,2016,108.
APA	Pan, Ruobing[1].,Li, Jun[2].,Zhuge, Fei[3].,Zhu, Liqiang[4].,Liang, Lingyan[5].,...&Li, Kang[10].(2016).Synaptic devices based on purely electronic memristors.APPLIED PHYSICS LETTERS,108.
MLA	Pan, Ruobing[1],et al."Synaptic devices based on purely electronic memristors".APPLIED PHYSICS LETTERS 108(2016).

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