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	Effect of P and Ge doping on microstructure of Sn-0.3Ag-0.7Cu/Cu solder joints
	Yan, Xingchen[1]; Zhang, Yichen[2]; Wang, Chunyan[3]; Xu, Kexin[4]; Wang, Junjie[5]; Wei, Xicheng[6]
	2016
会议名称	17th International Conference on Electronic Packaging Technology (ICEPT)
会议日期	2016-08-16
关键词	SAC0307 Microstructure IMC Thermal aging
页码	1185-1188
URL标识	查看原文
内容类型	会议论文
URI标识	http://www.corc.org.cn/handle/1471x/2235037
专题	上海大学
作者单位	1.[1]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200072, Peoples R China. 2.[2]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200072, Peoples R China. 3.[3]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200072, Peoples R China. 4.[4]China Leihua Elect Technol Res Inst, Wuxi 214063, Peoples R China. 5.[5]Shanghai Automobile Gear Works, Shanghai 200072, Peoples R China. 6.[6]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200072, Peoples R China.
推荐引用方式 GB/T 7714	Yan, Xingchen[1],Zhang, Yichen[2],Wang, Chunyan[3],et al. Effect of P and Ge doping on microstructure of Sn-0.3Ag-0.7Cu/Cu solder joints[C]. 见:17th International Conference on Electronic Packaging Technology (ICEPT). 2016-08-16.

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