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	High-mobility thin film transistors with neodymium-substituted indium oxide active layer (EI收录)
	Lin, Zhenguo[1]; Lan, Linfeng[1]; Xiao, Peng[1]; Sun, Sheng[1]; Li, Yuzhiq[1]; Song, Wei[1]; Gao, Peixiong[1]; Wang, Lei[1]; Ning, Honglong[1]; Peng, Junbiao[1]
刊名	Applied Physics Letters
	2015
卷号	107
关键词	Annealing Electron microscopy Energy dispersive spectroscopy Indium Neodymium Thin film transistors Thin films X ray diffraction X ray spectroscopy
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2211979
专题	华南理工大学
作者单位	[1] State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, China
推荐引用方式 GB/T 7714	Lin, Zhenguo[1],Lan, Linfeng[1],Xiao, Peng[1],等. High-mobility thin film transistors with neodymium-substituted indium oxide active layer (EI收录)[J]. Applied Physics Letters,2015,107.
APA	Lin, Zhenguo[1].,Lan, Linfeng[1].,Xiao, Peng[1].,Sun, Sheng[1].,Li, Yuzhiq[1].,...&Peng, Junbiao[1].(2015).High-mobility thin film transistors with neodymium-substituted indium oxide active layer (EI收录).Applied Physics Letters,107.
MLA	Lin, Zhenguo[1],et al."High-mobility thin film transistors with neodymium-substituted indium oxide active layer (EI收录)".Applied Physics Letters 107(2015).

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