Modeling Ammonothermal Growth of GaN Single Crystals: The Role of Transport

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	Modeling Ammonothermal Growth of GaN Single Crystals: The Role of Transport
	Pendurti S; Chen QS(陈启生); Prasad V
刊名	Journal of Crystal Growth
	2006
通讯作者邮箱	pendurti@fiu.edu
卷号	296 期号:0 页码:150-158
ISSN号	0022-0248
通讯作者	Pendurti, S (reprint author), Florida Int Univ, Dept Engn Mech, EAS 2710,10555 W Flagler St, Miami, FL 33199 USA.
中文摘要	Single crystal gallium nitride (GaN) is an important technological material used primarily for the manufacture of blue light lasers. An important area of contemporary research is developing a viable growth technique. The ammonothermal technique is an important candidate among many others with promise of commercially viable growth rates and material quality. The GaN growth rates are a complicated function of dissolution kinetics, transport by thermal convection and crystallization kinetics. A complete modeling effort for the growth would involve modeling each of these phenomena and also the coupling between these. As a first step, the crystallization and dissolution kinetics were idealized and the growth rates as determined purely by transport were investigated. The growth rates thus obtained were termed ‘transport determined growth rates’ and in principle are the maximum growth rates that can be obtained for a given configuration of the system. Using this concept, a parametric study was conducted primarily on the geometric and the thermal boundary conditions of the system to optimize the ‘transport determined growth rate’ and determine conditions when transport might be a bottleneck.
学科主题	力学
类目[WOS]	Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied
研究领域[WOS]	Crystallography ; Materials Science ; Physics
关键词[WOS]	GALLIUM NITRIDE ; ALN
收录类别	SCI ; EI
语种	英语
WOS记录号	WOS:000242325300005
公开日期	2007-06-15 ; 2007-12-05 ; 2009-06-23
内容类型	期刊论文
源URL	[http://dspace.imech.ac.cn/handle/311007/17590]
专题	力学研究所_力学所知识产出(1956-2008)
推荐引用方式 GB/T 7714	Pendurti S,Chen QS,Prasad V. Modeling Ammonothermal Growth of GaN Single Crystals: The Role of Transport[J]. Journal of Crystal Growth,2006,296(0):150-158.
APA	Pendurti S,陈启生,&Prasad V.(2006).Modeling Ammonothermal Growth of GaN Single Crystals: The Role of Transport.Journal of Crystal Growth,296(0),150-158.
MLA	Pendurti S,et al."Modeling Ammonothermal Growth of GaN Single Crystals: The Role of Transport".Journal of Crystal Growth 296.0(2006):150-158.