QQ客服 官方微博 反馈留言

	A Region-Based Through-Silicon via Repair Method for Clustered Faults
	Nie, M; Yan, AB; Liang, HG; Ni, TM; Huang, ZF; Xu, XM
刊名	IEICE TRANSACTIONS ON ELECTRONICS
	2017
卷号	E100C No.12页码:1108-1117
关键词	3D ICs yield enhancement TSV redundancy reparability additional delay overhead
ISSN号	1745-1353
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2204789
专题	安徽大学
作者单位	1.Hefei Univ Technol, Sch Elect Sci & Appl Phys, Hefei 230009, Anhui, Peoples R China 2.Anhui Univ, Sch Comp Sci & Technol, Hefei 230009, Anhui, Peoples R China 3.Hefei Univ Technol, Sch Comp & Informat, Hefei 230009, Anhui, Peoples R China
推荐引用方式 GB/T 7714	Nie, M,Yan, AB,Liang, HG,et al. A Region-Based Through-Silicon via Repair Method for Clustered Faults[J]. IEICE TRANSACTIONS ON ELECTRONICS,2017,E100C No.12:1108-1117.
APA	Nie, M,Yan, AB,Liang, HG,Ni, TM,Huang, ZF,&Xu, XM.(2017).A Region-Based Through-Silicon via Repair Method for Clustered Faults.IEICE TRANSACTIONS ON ELECTRONICS,E100C No.12,1108-1117.
MLA	Nie, M,et al."A Region-Based Through-Silicon via Repair Method for Clustered Faults".IEICE TRANSACTIONS ON ELECTRONICS E100C No.12(2017):1108-1117.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。