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	Annealing-induced evolution in interface stability and electrical performance of sputtering-driven rare-earth-based gate oxides
	Shuang Liang; Die Wang; Mao Liu; Gang He
刊名	Journal of Alloys and Compounds
	2019
卷号	Vol.778页码:579-587
关键词	DyO gate dielectrics High-k Annealing temperature Optical properties Electrical characteristics
ISSN号	0925-8388
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2204642
专题	安徽大学
作者单位	1.b Institute of Physical Science and Information Technology, Anhui University, Hefei 230601, PR China a School of Physics and Materials Science, Radiation Detection Materials & Devices Lab, Anhui University, Hefei 230601, PR China 2.Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanostructure, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, PR China
推荐引用方式 GB/T 7714	Shuang Liang,Die Wang,Mao Liu,et al. Annealing-induced evolution in interface stability and electrical performance of sputtering-driven rare-earth-based gate oxides[J]. Journal of Alloys and Compounds,2019,Vol.778:579-587.
APA	Shuang Liang,Die Wang,Mao Liu,&Gang He.(2019).Annealing-induced evolution in interface stability and electrical performance of sputtering-driven rare-earth-based gate oxides.Journal of Alloys and Compounds,Vol.778,579-587.
MLA	Shuang Liang,et al."Annealing-induced evolution in interface stability and electrical performance of sputtering-driven rare-earth-based gate oxides".Journal of Alloys and Compounds Vol.778(2019):579-587.

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