| Enhanced electron field emission from nanocrystalline orthorhombic boron nitride films | |
| Hongying Mao; Xiaojin Wang; Yan Cao; Xuxin Yang; Quan-Lin Ye | |
| 刊名 | Materials Letters
 |
| 2019 | |
| 卷号 | Vol.239页码:79-81 |
| 关键词 | Boron nitride Semiconductors Thin films Physical vapour deposition Electron field emission |
| ISSN号 | 0167-577X |
| URL标识 | 查看原文 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/2202583 |
| 专题 | 安徽大学 |
| 作者单位 | 1.b College of Chemistry and Chemical Engineering, Anhui University, Hefei 230601, PR China 2.Institute for Combustion Science and Environmental Technology, Department of Chemistry, Western Kentucky University, Bowling Green, KY 42101, United States a Department of Physics, Hangzhou Normal University, Hangzhou 311121, PR China |
| 推荐引用方式 GB/T 7714 | Hongying Mao,Xiaojin Wang,Yan Cao,et al. Enhanced electron field emission from nanocrystalline orthorhombic boron nitride films[J]. Materials Letters,2019,Vol.239:79-81. |
| APA | Hongying Mao,Xiaojin Wang,Yan Cao,Xuxin Yang,&Quan-Lin Ye.(2019).Enhanced electron field emission from nanocrystalline orthorhombic boron nitride films.Materials Letters,Vol.239,79-81. |
| MLA | Hongying Mao,et al."Enhanced electron field emission from nanocrystalline orthorhombic boron nitride films".Materials Letters Vol.239(2019):79-81. |
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