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	High-performance back-channel-etched thin-film transistors with amorphous Si-incorporated SnO2active layer (EI收录)
	Liu, Xianzhe[1]; Ning, Honglong[1]; Chen, Jianqiu[1]; Cai, Wei[1]; Hu, Shiben[1]; Tao, Ruiqiang[1]; Zeng, Yong[1]; Zheng, Zeke[1]; Yao, Rihui[1]; Xu, Miao[1]
刊名	Applied Physics Letters
	2016
卷号	108
关键词	Amorphous films Amorphous silicon Thin films Threshold voltage Tin oxides
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2196062
专题	华南理工大学
作者单位	[1] Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, China
推荐引用方式 GB/T 7714	Liu, Xianzhe[1],Ning, Honglong[1],Chen, Jianqiu[1],等. High-performance back-channel-etched thin-film transistors with amorphous Si-incorporated SnO2active layer (EI收录)[J]. Applied Physics Letters,2016,108.
APA	Liu, Xianzhe[1].,Ning, Honglong[1].,Chen, Jianqiu[1].,Cai, Wei[1].,Hu, Shiben[1].,...&Peng, Junbiao[1].(2016).High-performance back-channel-etched thin-film transistors with amorphous Si-incorporated SnO2active layer (EI收录).Applied Physics Letters,108.
MLA	Liu, Xianzhe[1],et al."High-performance back-channel-etched thin-film transistors with amorphous Si-incorporated SnO2active layer (EI收录)".Applied Physics Letters 108(2016).

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