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	Removal of MgO and enhancement of critical current density in urea-doped - MgB2 bulks by melting impregnation method
	Qin, Fengming[1]; Cai, Qi[2]; Liu, Yongchang[3]; Zhao, Qian[4]; Li, Yajie[5]
刊名	JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
	2017
卷号	28页码:15625-15629
ISSN号	0957-4522
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2184676
专题	上海大学
作者单位	1.[1]Taiyuan Univ Sci & Technol, Sch Mat Sci & Engn, Taiyuan 030024, Shanxi, Peoples R China. 2.[2]Shanghai Univ, Mat Genome Inst, 99 Shangda Rd, Shanghai 200444, Peoples R China. 3.[3]Tianjin Univ, Sch Mat Sci & Engn, Tianjin 300354, Peoples R China. 4.[4]Tianjin Univ Sci & Technol, Sch Mech Engn, Tianjin 300222, Peoples R China. 5.[5]Taiyuan Univ Sci & Technol, Sch Mat Sci & Engn, Taiyuan 030024, Shanxi, Peoples R China.
推荐引用方式 GB/T 7714	Qin, Fengming[1],Cai, Qi[2],Liu, Yongchang[3],et al. Removal of MgO and enhancement of critical current density in urea-doped - MgB2 bulks by melting impregnation method[J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2017,28:15625-15629.
APA	Qin, Fengming[1],Cai, Qi[2],Liu, Yongchang[3],Zhao, Qian[4],&Li, Yajie[5].(2017).Removal of MgO and enhancement of critical current density in urea-doped - MgB2 bulks by melting impregnation method.JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,28,15625-15629.
MLA	Qin, Fengming[1],et al."Removal of MgO and enhancement of critical current density in urea-doped - MgB2 bulks by melting impregnation method".JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS 28(2017):15625-15629.

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