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	Ultralow flexural properties of copper microhelices fabricated via electrodeposition-based three-dimensional direct-writing technology
	Yi, Zhiran[1]; Lei, Yu[2]; Zhang, Xianyun[3]; Chen, Yining[4]; Guo, Jianjun[5]; Xu, Gaojie[6]; Yu, Min-Feng[7]; Cui, Ping[8]
刊名	NANOSCALE
	2017
卷号	9页码:12524-12532
ISSN号	2040-3364
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2184483
专题	上海大学
作者单位	1.[1]Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Zhejiang Key Lab Addit Mfg Mat, Ningbo 315201, Zhejiang, Peoples R China. 2.[2]Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Zhejiang Key Lab Addit Mfg Mat, Ningbo 315201, Zhejiang, Peoples R China. 3.Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200444, Peoples R China. 4.[3]Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Zhejiang Key Lab Addit Mfg Mat, Ningbo 315201, Zhejiang, Peoples R China. 5.[4]Georgia Inst Technol, D Guggenheim Sch Aerosp Engn, Atlanta, GA 30332 USA. 6.[5]Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Zhejiang Key Lab Addit Mfg Mat, Ningbo 315201, Zhejiang, Peoples R China. 7.[6]Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Zhejiang Key Lab Addit Mfg Mat, Ningbo 315201, Zhejiang, Peoples R China. 8.[7]Georgia Inst Technol, D Guggenheim Sch Aerosp Engn, Atlanta, GA 30332 USA. 9.[8]Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Zhejiang Key Lab Addit Mfg Mat, Ningbo 315201, Zhejiang, Peoples R China.
推荐引用方式 GB/T 7714	Yi, Zhiran[1],Lei, Yu[2],Zhang, Xianyun[3],et al. Ultralow flexural properties of copper microhelices fabricated via electrodeposition-based three-dimensional direct-writing technology[J]. NANOSCALE,2017,9:12524-12532.
APA	Yi, Zhiran[1].,Lei, Yu[2].,Zhang, Xianyun[3].,Chen, Yining[4].,Guo, Jianjun[5].,...&Cui, Ping[8].(2017).Ultralow flexural properties of copper microhelices fabricated via electrodeposition-based three-dimensional direct-writing technology.NANOSCALE,9,12524-12532.
MLA	Yi, Zhiran[1],et al."Ultralow flexural properties of copper microhelices fabricated via electrodeposition-based three-dimensional direct-writing technology".NANOSCALE 9(2017):12524-12532.

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