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	High-Efficiency and Stable Quantum Dot Light-Emitting Diodes Enabled by a Solution-Processed Metal-Doped Nickel Oxide Hole Injection Interfacial Layer
	Cao, Fan[1]; Wang, Haoran[2]; Shen, Piaoyang[3]; Li, Xiaomin[4]; Zheng, Yanqiong[5]; Shang, Yuequn[6]; Zhang, Jianhua[7]; Ning, Zhijun[8]; Yang, Xuyong[9]
刊名	ADVANCED FUNCTIONAL MATERIALS
	2017
卷号	27
关键词	electroluminescence metal doping nickel oxide quantum dot LEDs
ISSN号	1616-301X
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2183967
专题	上海大学
作者单位	1.[1]Shanghai Univ, Educ Minist, Key Lab Adv Display & Syst Applicat, 149 Yanchang Rd, Shanghai 200072, Peoples R China. 2.[2]Shanghai Univ, Educ Minist, Key Lab Adv Display & Syst Applicat, 149 Yanchang Rd, Shanghai 200072, Peoples R China. 3.[3]Shanghai Univ, Educ Minist, Key Lab Adv Display & Syst Applicat, 149 Yanchang Rd, Shanghai 200072, Peoples R China. 4.[4]Shanghai Univ, Educ Minist, Key Lab Adv Display & Syst Applicat, 149 Yanchang Rd, Shanghai 200072, Peoples R China. 5.[5]Shanghai Univ, Educ Minist, Key Lab Adv Display & Syst Applicat, 149 Yanchang Rd, Shanghai 200072, Peoples R China. 6.[6]ShanghaiTech Univ, Sch Phys Sci & Technol, 393 Middle Huaxia Rd, Shanghai 201210, Peoples R China. 7.[7]Shanghai Univ, Educ Minist, Key Lab Adv Display & Syst Applicat, 149 Yanchang Rd, Shanghai 200072, Peoples R China. 8.[8]ShanghaiTech Univ, Sch Phys Sci & Technol, 393 Middle Huaxia Rd, Shanghai 201210, Peoples R China. 9.[9]Shanghai Univ, Educ Minist, Key Lab Adv Display & Syst Applicat, 149 Yanchang Rd, Shanghai 200072, Peoples R China.
推荐引用方式 GB/T 7714	Cao, Fan[1],Wang, Haoran[2],Shen, Piaoyang[3],et al. High-Efficiency and Stable Quantum Dot Light-Emitting Diodes Enabled by a Solution-Processed Metal-Doped Nickel Oxide Hole Injection Interfacial Layer[J]. ADVANCED FUNCTIONAL MATERIALS,2017,27.
APA	Cao, Fan[1].,Wang, Haoran[2].,Shen, Piaoyang[3].,Li, Xiaomin[4].,Zheng, Yanqiong[5].,...&Yang, Xuyong[9].(2017).High-Efficiency and Stable Quantum Dot Light-Emitting Diodes Enabled by a Solution-Processed Metal-Doped Nickel Oxide Hole Injection Interfacial Layer.ADVANCED FUNCTIONAL MATERIALS,27.
MLA	Cao, Fan[1],et al."High-Efficiency and Stable Quantum Dot Light-Emitting Diodes Enabled by a Solution-Processed Metal-Doped Nickel Oxide Hole Injection Interfacial Layer".ADVANCED FUNCTIONAL MATERIALS 27(2017).

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