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	Ambipolar organic transistors with high on/off ratio by introducing a modified layer of gate insulator
	Zhang, Yu[1]; Wei, Xicheng[2]; Zhang, Hao[3]; Chen, Xiong[4]; Wang, Jun[5]
刊名	APPLIED SURFACE SCIENCE
	2018
卷号	427页码:452-457
关键词	Ambipolar charge transport Oxotitanium phthalocyanine Modified layer
ISSN号	0169-4332
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2180576
专题	上海大学
作者单位	1.[1]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200072, Peoples R China. 2.Fujian Jiangxia Univ, Coll Elect & Informat Sci, Organ Optoelect Engn Res Ctr Fujians Univ, Fuzhou 350108, Fujian, Peoples R China. 3.[2]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200072, Peoples R China. 4.[3]Fujian Jiangxia Univ, Coll Elect & Informat Sci, Organ Optoelect Engn Res Ctr Fujians Univ, Fuzhou 350108, Fujian, Peoples R China. 5.[4]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200072, Peoples R China. 6.[5]Fujian Jiangxia Univ, Coll Elect & Informat Sci, Organ Optoelect Engn Res Ctr Fujians Univ, Fuzhou 350108, Fujian, Peoples R China.
推荐引用方式 GB/T 7714	Zhang, Yu[1],Wei, Xicheng[2],Zhang, Hao[3],et al. Ambipolar organic transistors with high on/off ratio by introducing a modified layer of gate insulator[J]. APPLIED SURFACE SCIENCE,2018,427:452-457.
APA	Zhang, Yu[1],Wei, Xicheng[2],Zhang, Hao[3],Chen, Xiong[4],&Wang, Jun[5].(2018).Ambipolar organic transistors with high on/off ratio by introducing a modified layer of gate insulator.APPLIED SURFACE SCIENCE,427,452-457.
MLA	Zhang, Yu[1],et al."Ambipolar organic transistors with high on/off ratio by introducing a modified layer of gate insulator".APPLIED SURFACE SCIENCE 427(2018):452-457.

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