| Crystal imperfection modulation engineering for functionalization of wide band gap semiconductor radiation detector | |
| Ji, Xu1; Chen, Liang2; Xu, Mengxuan3; Dong, Mei1; Yan, Kun1; Cheng, Shuang4; Kong, Xueqian5; Wang, Tongyao5; Liu, Jiandang6; Gu, Bingchuan6 | |
| 刊名 | Advanced electronic materials
 |
| 2018-02-01 | |
| 卷号 | 4期号:2页码:8 |
| 关键词 | Crystal imperfection modulation engineering Electrochemical doping H elimination Wide band gap semiconductor Zno |
| ISSN号 | 2199-160X |
| DOI | 10.1002/aelm.201700307 |
| 通讯作者 | Huang, feng(huangfeng@mail.sysu.edu.cn) ; Ouyang, xiaoping(oyxp2003@aliyun.com) |
| 英文摘要 | Controllable and repeatable crystal imperfection modulation engineering (cime) is important for the development of semiconductor science and technology. however, for wide band gap semiconductors (wbgss), there still lacks universal and reliable cime. here, based on the general idea of chemical composition complete expression design, a well-designed, repeatable, and feasible cime for zno is introduced, making free modulation of carrier in wbgs become possible. briefly, this extraordinary cime is dominated by two innovative procedures: an electrochemical doping and a strong oxidizing atmosphere annealing. the proposed cime is a repeatable and universal carrier modulation project, which holds technological promise for various wbgs-based semiconductor devices. benefiting from this cime, an particle detector which operating at a high electric field of 10(7) v cm(-1) can be fabricated successfully. |
| WOS关键词 | POSITRON-ANNIHILATION ; ZNO ; LIFETIME ; DEFECTS ; FILMS |
| WOS研究方向 | Science & Technology - Other Topics ; Materials Science ; Physics |
| WOS类目 | Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied |
| 语种 | 英语 |
| 出版者 | WILEY |
| WOS记录号 | WOS:000424888600003 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/2177992 |
| 专题 | 高能物理研究所 |
| 通讯作者 | Huang, Feng; Ouyang, Xiaoping |
| 作者单位 | 1.Sun Yat Sen Univ, Sch Mat, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China 2.Northwest Inst Nucl Technol, Radiat Detect Res Ctr, POB 69-9, Xian 710024, Shaanxi, Peoples R China 3.Xi An Jiao Tong Univ, Sch Nucl Sci & Technol, Xian 710049, Shaanxi, Peoples R China 4.South China Univ Technol, Sch Environm & Energy, New Energy Res Inst, Guangzhou 510006, Guangdong, Peoples R China 5.Zhejiang Univ, Dept Chem, Hangzhou 310000, Zhejiang, Peoples R China 6.Univ Sci & Technol China, Sch Phys Sci, State Key Lab Particle Detect & Elect, Hefei 230040, Anhui, Peoples R China 7.Chinese Acad Sci, Inst High Energy Phys, Beijing 100049, Peoples R China 8.Soochow Univ, Sch Radiat Med & Protect, Suzhou 510006, Peoples R China |
| 推荐引用方式 GB/T 7714 | Ji, Xu,Chen, Liang,Xu, Mengxuan,et al. Crystal imperfection modulation engineering for functionalization of wide band gap semiconductor radiation detector[J]. Advanced electronic materials,2018,4(2):8. |
| APA | Ji, Xu.,Chen, Liang.,Xu, Mengxuan.,Dong, Mei.,Yan, Kun.,...&Ouyang, Xiaoping.(2018).Crystal imperfection modulation engineering for functionalization of wide band gap semiconductor radiation detector.Advanced electronic materials,4(2),8. |
| MLA | Ji, Xu,et al."Crystal imperfection modulation engineering for functionalization of wide band gap semiconductor radiation detector".Advanced electronic materials 4.2(2018):8. |
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