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	Study on ion-implantation induced intermixing effect of quantum wen by using photoluminescence spectroscopy
	Chen, CB; Lu, W; Miao, ZL; Li, ZF; Cai, WY; Shen, XC; Chen, CM; Zhu, DZ; Hu, J; Li, MQ
刊名	Acta physica sinica
	2002-03-01
卷号	51期号:3页码:659-662
关键词	Quantum well Ion-implantation Photoluminescence Intermixing
ISSN号	1000-3290
通讯作者	Chen, cb()
英文摘要	The intermixing induced by ion-implantation on a series of comparable asymmetrical-coupled gaas/algaas quantum-well samples have been studied by photoluminescence(pl) spectra measurements. the results of the pl spectra and the calculation based on effective mass approximation theory show that the proton implantation is the dominate process for al diffusion across the heterointerfaces. the main effect of rapid thermal annealing is to remove the non-radiative centre.
WOS关键词	WELLS
WOS研究方向	Physics
WOS类目	Physics, Multidisciplinary
语种	英语
出版者	CHINESE PHYSICAL SOC
WOS记录号	WOS:000174400000038
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2176353
专题	高能物理研究所
通讯作者	Chen, CB
作者单位	1.Chinese Acad Sci, State Key Lab Infrared Phys, Shanghai Inst Tech Phys, Shanghai 200083, Peoples R China 2.Chinese Acad Sci, Lab Nucl Anal Tech, Shanghai Inst Nucl Res, Shanghai 201800, Peoples R China
推荐引用方式 GB/T 7714	Chen, CB,Lu, W,Miao, ZL,et al. Study on ion-implantation induced intermixing effect of quantum wen by using photoluminescence spectroscopy[J]. Acta physica sinica,2002,51(3):659-662.
APA	Chen, CB.,Lu, W.,Miao, ZL.,Li, ZF.,Cai, WY.,...&Li, MQ.(2002).Study on ion-implantation induced intermixing effect of quantum wen by using photoluminescence spectroscopy.Acta physica sinica,51(3),659-662.
MLA	Chen, CB,et al."Study on ion-implantation induced intermixing effect of quantum wen by using photoluminescence spectroscopy".Acta physica sinica 51.3(2002):659-662.

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