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	Improvement of the long-term stability of ZnSnO thin film transistors by tungsten incorporation using a solution-process method
	Yang, Xiang[1]; Jiang, Shu[2]; Li, Jun[3]; Zhang, Jian-Hua[4]; Li, Xi-Feng[5]
刊名	RSC ADVANCES
	2018
卷号	8页码:20990-20995
ISSN号	2046-2069
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2173926
专题	上海大学
作者单位	1.[1]Shanghai Univ, Minist Educ, Key Lab Adv Display & Syst Applicat, Shanghai 200072, Peoples R China. 2.[2]Shanghai Univ, Minist Educ, Key Lab Adv Display & Syst Applicat, Shanghai 200072, Peoples R China. 3.[3]Shanghai Univ, Coll Mat Sci & Engn, Shanghai 200072, Peoples R China. 4.[4]Shanghai Univ, Minist Educ, Key Lab Adv Display & Syst Applicat, Shanghai 200072, Peoples R China. 5.[5]Shanghai Univ, Minist Educ, Key Lab Adv Display & Syst Applicat, Shanghai 200072, Peoples R China.
推荐引用方式 GB/T 7714	Yang, Xiang[1],Jiang, Shu[2],Li, Jun[3],et al. Improvement of the long-term stability of ZnSnO thin film transistors by tungsten incorporation using a solution-process method[J]. RSC ADVANCES,2018,8:20990-20995.
APA	Yang, Xiang[1],Jiang, Shu[2],Li, Jun[3],Zhang, Jian-Hua[4],&Li, Xi-Feng[5].(2018).Improvement of the long-term stability of ZnSnO thin film transistors by tungsten incorporation using a solution-process method.RSC ADVANCES,8,20990-20995.
MLA	Yang, Xiang[1],et al."Improvement of the long-term stability of ZnSnO thin film transistors by tungsten incorporation using a solution-process method".RSC ADVANCES 8(2018):20990-20995.

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