A Layer-by-Layer Growth Strategy for Large-Size InP/ZnSe/ZnS Core-Shell Quantum Dots Enabling High-Efficiency Light-Emitting Diodes | |
Cao, Fan[1]; Wang, Sheng[2]; Wang, Feijiu[3]; Wu, Qianqian[4]; Zhao, Dewei[5]; Yang, Xuyong[6] | |
刊名 | CHEMISTRY OF MATERIALS |
2018 | |
卷号 | 30页码:8002-8007 |
ISSN号 | 0897-4756 |
URL标识 | 查看原文 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/2168798 |
专题 | 上海大学 |
作者单位 | 1.[1]Shanghai Univ, Key Lab Adv Display & Syst Applicat, Minist Educ, 149 Yanchang Rd, Shanghai 200072, Peoples R China. 2.[2]Shanghai Univ, Key Lab Adv Display & Syst Applicat, Minist Educ, 149 Yanchang Rd, Shanghai 200072, Peoples R China. 3.[3]Kyoto Univ, Inst Adv Energy, Uji, Kyoto 6110011, Japan. 4.[4]Shanghai Univ, Key Lab Adv Display & Syst Applicat, Minist Educ, 149 Yanchang Rd, Shanghai 200072, Peoples R China. 5.[5]Univ Toledo, Dept Phys & Astron, Toledo, OH 43606 USA.,Univ Toledo, Wright Ctr Photovolta Innovat & Commercializat, 2801 W Bancroft St, Toledo, OH 43606 USA. 6.[6]Shanghai Univ, Key Lab Adv Display & Syst Applicat, Minist Educ, 149 Yanchang Rd, Shanghai 200072, Peoples R China. |
推荐引用方式 GB/T 7714 | Cao, Fan[1],Wang, Sheng[2],Wang, Feijiu[3],et al. A Layer-by-Layer Growth Strategy for Large-Size InP/ZnSe/ZnS Core-Shell Quantum Dots Enabling High-Efficiency Light-Emitting Diodes[J]. CHEMISTRY OF MATERIALS,2018,30:8002-8007. |
APA | Cao, Fan[1],Wang, Sheng[2],Wang, Feijiu[3],Wu, Qianqian[4],Zhao, Dewei[5],&Yang, Xuyong[6].(2018).A Layer-by-Layer Growth Strategy for Large-Size InP/ZnSe/ZnS Core-Shell Quantum Dots Enabling High-Efficiency Light-Emitting Diodes.CHEMISTRY OF MATERIALS,30,8002-8007. |
MLA | Cao, Fan[1],et al."A Layer-by-Layer Growth Strategy for Large-Size InP/ZnSe/ZnS Core-Shell Quantum Dots Enabling High-Efficiency Light-Emitting Diodes".CHEMISTRY OF MATERIALS 30(2018):8002-8007. |
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