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	Microstructure, optical and electrical properties of solution-derived peroxo-zirconium oxide gate dielectrics for CMOS application
	Sun,Zhaoqi; Lv,Jianguo; Liu,Mao; Xiao,Dongqi; Jin,Peng; He,Gang; Zheng,Changyong
刊名	Ceramics International
	2016
卷号	Vol.42 No.1Part A页码:759-766
关键词	ATOMIC LAYER DEPOSITION OXYGEN PARTIAL-PRESSURE ZRO2 THIN-FILMS TEMPERATURE-DEPENDENCE ROOM-TEMPERATURE STACKS SEMICONDUCTOR ELLIPSOMETRY TRANSISTORS OXIDATION
ISSN号	0272-8842
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2156293
专题	安徽大学
作者单位	1.Hefei Normal Univ, Dept Phys & Elect Engn, Hefei 230061, Peoples R China 2.Anhui Univ, Sch Phys & Mat Sci, Radiat Detect Mat & Devices Lab, Hefei 230601, Peoples R China 3.Chinese Acad Sci, Inst Solid State Phys, Anhui Key Lab Nanomat & Nanostruct, Key Lab Mat Phys, Hefei 230031, Peoples R China
推荐引用方式 GB/T 7714	Sun,Zhaoqi,Lv,Jianguo,Liu,Mao,et al. Microstructure, optical and electrical properties of solution-derived peroxo-zirconium oxide gate dielectrics for CMOS application[J]. Ceramics International,2016,Vol.42 No.1Part A:759-766.
APA	Sun,Zhaoqi.,Lv,Jianguo.,Liu,Mao.,Xiao,Dongqi.,Jin,Peng.,...&Zheng,Changyong.(2016).Microstructure, optical and electrical properties of solution-derived peroxo-zirconium oxide gate dielectrics for CMOS application.Ceramics International,Vol.42 No.1Part A,759-766.
MLA	Sun,Zhaoqi,et al."Microstructure, optical and electrical properties of solution-derived peroxo-zirconium oxide gate dielectrics for CMOS application".Ceramics International Vol.42 No.1Part A(2016):759-766.

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