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	Effect of intense terahertz laser and magnetic fields on the binding energy and the transition energy of shallow impurity in a bulk semiconductor
	Zhang,Sha; Wu,Bo; Xu,Lei; Wang,Weiyang; Wei,Xiangfei
刊名	Physica B: Condensed Matter
	2017
卷号	Vol.521页码:122-127
关键词	QUANTUM-WELL WIRES PHOTOIONIZATION CROSS-SECTION DONOR IMPURITY STATES DOTS TEMPERATURE RADIATION SYSTEM
ISSN号	0921-4526
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2155082
专题	安徽大学
作者单位	1.West AnHui Univ, Luan 237012, Peoples R China 2.Shangrao Normal Univ, Sch Phys & Elect Informat, Shangrao 334001, Jiangxi, Peoples R China
推荐引用方式 GB/T 7714	Zhang,Sha,Wu,Bo,Xu,Lei,et al. Effect of intense terahertz laser and magnetic fields on the binding energy and the transition energy of shallow impurity in a bulk semiconductor[J]. Physica B: Condensed Matter,2017,Vol.521:122-127.
APA	Zhang,Sha,Wu,Bo,Xu,Lei,Wang,Weiyang,&Wei,Xiangfei.(2017).Effect of intense terahertz laser and magnetic fields on the binding energy and the transition energy of shallow impurity in a bulk semiconductor.Physica B: Condensed Matter,Vol.521,122-127.
MLA	Zhang,Sha,et al."Effect of intense terahertz laser and magnetic fields on the binding energy and the transition energy of shallow impurity in a bulk semiconductor".Physica B: Condensed Matter Vol.521(2017):122-127.

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