| A Robust High Density 7T Subthreshold SRAM Bitcell with Partial Dynamic Threshold Voltage Connection Scheme | |
| Kai Huang; Jun Yang; Mingqiang Qiu; Na Bai | |
| 会议日期 | 0000-00-00 00:00:00 |
| 会议地点 | 台湾 |
| 关键词 | subthreshold SRAM static noise margin high density |
| 会议录 | 第二届制造与设计科学国际会议(ICFMD 2011)论文集
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| URL标识 | 查看原文 |
| 内容类型 | 会议论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/2152849 |
| 专题 | 安徽大学 |
| 作者单位 | 1.National ASIC System Engineering Research Center,Southeast University,Nanjing,China 2.School of Ele 3.School of Electronics and Information Engineering,Anhui University,Hefei,China |
| 推荐引用方式 GB/T 7714 | Kai Huang,Jun Yang,Mingqiang Qiu,et al. A Robust High Density 7T Subthreshold SRAM Bitcell with Partial Dynamic Threshold Voltage Connection Scheme[C]. 见:. 台湾. 0000-00-00 00:00:00. |
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