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	Effects of the insertion of InAs strain-compensating layers on photoluminescence properties of GaAsN/GaAs quantum-well structures (EI收录)
	Gao, Q.[1]; Tan, H.H.[1]; Sun, B.Q.[2,5]; Gal, M.[2]; Ouyang, L.[3,6]; Zou, J.[4]; Jagadish, C.[1]
会议名称	IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC
会议日期	September 20, 2004 - September 25, 2004
会议地点	Beijing, China
关键词	Metallorganic chemical vapor deposition Monolayers Optical properties Photoluminescence Semiconducting gallium compounds Semiconductor quantum wells Transmission electron microscopy
URL标识	查看原文
内容类型	会议论文
URI标识	http://www.corc.org.cn/handle/1471x/2118650
专题	华南理工大学
作者单位	1.[1] Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University, Canberra, ACT 0200, Australia 2.[2] School of Physics, University of New South Wales, Sydney, NSW 2052, Australia 3.[3] Australian Key Centre for Microscopy and Microanalysis, University of Sydney, Sydney, NSW 2006, Australia 4.[4] Division of Materials, Centre for Microscopy and Microanalysis, University of Queensland, QLD 4072, Australia 5.[5] NLSM, Institute of Semiconductors, CAS, P.O.Box 912, Beijing 100083, China 6.[6] College of Mechanical Engineering, South China University of Technology, Guangzhou, 510641, China
推荐引用方式 GB/T 7714	Gao, Q.[1],Tan, H.H.[1],Sun, B.Q.[2,5],等. Effects of the insertion of InAs strain-compensating layers on photoluminescence properties of GaAsN/GaAs quantum-well structures (EI收录)[C]. 见:IEEE Semiconducting and Semi-Insulating Materials Conference, SIMC. Beijing, China. September 20, 2004 - September 25, 2004.

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