GeSn p-i-n photodetector for all telecommunication bands detection

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	GeSn p-i-n photodetector for all telecommunication bands detection
	Su SJ ; Cheng BW ; Xue CL ; Wang W ; Cao QA ; Xue HY ; Hu WX ; Zhang GZ ; Zuo YH ; Wang QM
刊名	optics express
	2011
卷号	19 期号:7 页码:6408-6413
关键词	HIGH-PERFORMANCE SEMICONDUCTORS SILICON
ISSN号	1094-4087
通讯作者	su, sj, chinese acad sci, inst semicond, state key lab integrated optoelect, pob 912, beijing 100083, peoples r china. clxue@semi.ac.cn
学科主题	光电子学
收录类别	SCI
资助信息	national basic research program of china [2007cb613404]; national natural science foundation of china [60906035, 61036003, 51072194]
语种	英语
公开日期	2011-07-05 ; 2011-07-15
附注	using a 820 nm-thick high-quality ge0.97sn0.03 alloy film grown on si(001) by molecular beam epitaxy, gesn p-i-n photodectectors have been fabricated. the detectors have relatively high responsivities, such as 0.52 a/w, 0.23 a/w, and 0.12 a/w at 1310 nm, 1540 nm, and 1640 nm, respectively, under a 1 v reverse bias. with a broad detection spectrum (800-1800 nm) covering the whole telecommunication windows and compatibility with conventional complementary metal-oxide-semiconductors (cmos) technology, the gesn devices are attractive for applications in both optical communications and optical interconnects. (c) 2011 optical society of america
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/20979]
专题	半导体研究所_集成光电子学国家重点实验室
推荐引用方式 GB/T 7714	Su SJ,Cheng BW,Xue CL,et al. GeSn p-i-n photodetector for all telecommunication bands detection[J]. optics express,2011,19(7):6408-6413.
APA	Su SJ.,Cheng BW.,Xue CL.,Wang W.,Cao QA.,...&Wang QM.(2011).GeSn p-i-n photodetector for all telecommunication bands detection.optics express,19(7),6408-6413.
MLA	Su SJ,et al."GeSn p-i-n photodetector for all telecommunication bands detection".optics express 19.7(2011):6408-6413.