Wavelength-Tunable Si-Based InGaAs Resonant Cavity Enhanced Photodetectors Using Sol-Gel Wafer Bonding Technology

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	Wavelength-Tunable Si-Based InGaAs Resonant Cavity Enhanced Photodetectors Using Sol-Gel Wafer Bonding Technology
	Cao Q
刊名	ieee photonics technology letters
	2011
卷号	23 期号:13 页码:881-883
关键词	Resonant cavity enhanced (RCE) photodetector silicon photonics sol-gel wafer bonding thermal tuning INTERFACIAL ENERGY SILICON-WAFERS HIGH-SPEED TEMPERATURE PHOTODIODES MORPHOLOGY POWER
ISSN号	1041-1135
通讯作者	zhang, lz, chinese acad sci, inst semicond, beijing 100083, peoples r china. zhang.labs@gmail.com ; pobakey@semi.ac.cn ; yhzuo@semi.ac.cn ; clxue@semi.ac.cn ; cbw@semi.ac.cn ; qmwang@semi.ac.cn
学科主题	光电子学
收录类别	SCI
资助信息	national basic research program of china [2006cb302802]; national natural science foundation [60676005, 60906035]; chinese academy of sciences [iscas2009t01]
语种	英语
公开日期	2011-07-05 ; 2011-07-15
附注	we report resonant cavity enhanced (rce) ingaas/si photodetectors fabricated by sol-gel wafer bonding technology. the bonding temperature was 300 degrees c. a 60-mu m-diameter photodetector demonstrated dark current density of 0.59 pa/mu m(2) at 0-v bias and 24.7 pa/mu m(2) at 2-v reverse bias, peak responsivity of 0.7 a/w, and full-width at half-maximum (fwhm) of 6 nm around 1.55 mu m. the 3-db bandwidth of a 20-mu m-diameter photodetector was 17.05 ghz under 1-v reverse bias voltage. red shift of the resonant wavelength caused by thermo-optic effect was observed. the thermal tuning range achieved 15 nm.
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/20945]
专题	半导体研究所_集成光电子学国家重点实验室
推荐引用方式 GB/T 7714	Cao Q. Wavelength-Tunable Si-Based InGaAs Resonant Cavity Enhanced Photodetectors Using Sol-Gel Wafer Bonding Technology[J]. ieee photonics technology letters,2011,23(13):881-883.
APA	Cao Q.(2011).Wavelength-Tunable Si-Based InGaAs Resonant Cavity Enhanced Photodetectors Using Sol-Gel Wafer Bonding Technology.ieee photonics technology letters,23(13),881-883.
MLA	Cao Q."Wavelength-Tunable Si-Based InGaAs Resonant Cavity Enhanced Photodetectors Using Sol-Gel Wafer Bonding Technology".ieee photonics technology letters 23.13(2011):881-883.