| Oxygen incorporation in wide band gap semiconductor ZnSe thin films | |
| Can Wen; Zhe Zhu; Wei Li; Jingquan Zhang; Lili Wu; Bing Li; Guanggen Zeng; Wenwu Wang | |
| 刊名 | Journal of Alloys and Compounds
 |
| 2017 | |
| 卷号 | Vol.718页码:197-203 |
| 关键词 | Oxygen incorporation ZnSe thin films II–VI chalcogenide series |
| ISSN号 | 0925-8388 |
| URL标识 | 查看原文 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/1995997 |
| 专题 | 四川大学 |
| 作者单位 | College of Materials Science and Engineering, Sichuan University, Chengdu, 610064, China |
| 推荐引用方式 GB/T 7714 | Can Wen,Zhe Zhu,Wei Li,et al. Oxygen incorporation in wide band gap semiconductor ZnSe thin films[J]. Journal of Alloys and Compounds,2017,Vol.718:197-203. |
| APA | Can Wen.,Zhe Zhu.,Wei Li.,Jingquan Zhang.,Lili Wu.,...&Wenwu Wang.(2017).Oxygen incorporation in wide band gap semiconductor ZnSe thin films.Journal of Alloys and Compounds,Vol.718,197-203. |
| MLA | Can Wen,et al."Oxygen incorporation in wide band gap semiconductor ZnSe thin films".Journal of Alloys and Compounds Vol.718(2017):197-203. |
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