High purity alpha silicon nitride nanowires –synthesis and dielectric properties

	High purity alpha silicon nitride nanowires –synthesis and dielectric properties
	T. Xie ; Y. C. Wu ; W. P. Cai ; L. D. Zhang
刊名	phys. stat. sol. (a)
	2005
期号	202
合作状况	其它
学科主题	纳米材料与技术
收录类别	SCI
公开日期	2010-08-17
内容类型	期刊论文
源URL	[http://ir.hfcas.ac.cn/handle/334002/3882]
专题	合肥物质科学研究院_中科院固体物理研究所
推荐引用方式 GB/T 7714	T. Xie,Y. C. Wu,W. P. Cai,et al. High purity alpha silicon nitride nanowires –synthesis and dielectric properties[J]. phys. stat. sol. (a),2005(202).
APA	T. Xie,Y. C. Wu,W. P. Cai,&L. D. Zhang.(2005).High purity alpha silicon nitride nanowires –synthesis and dielectric properties.phys. stat. sol. (a)(202).
MLA	T. Xie,et al."High purity alpha silicon nitride nanowires –synthesis and dielectric properties".phys. stat. sol. (a) .202(2005).