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	CZTSe solar cells prepared by electrodeposition of Cu/Sn/Zn stack layer followed by selenization at low Se pressure.
	Yao L; Ao J; Jeng MJ; Bi J; Gao S; He Q; Zhou Z; Sun G; Sun Y; Chang LB
刊名	Nanoscale Res Lett
	2014
卷号	Vol.9 No.1页码:678
关键词	Cu/Sn/Zn precursors Cu2ZnSnSe4 (CZTSe) Electrodeposition Selenization Solar cells
ISSN号	1931-7573
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/1863056
专题	南开大学
作者单位	Institute of Photoelectronic Thin Film Devices and Technology and Tianjin Key Laboratory of Thin film Devices and Technology, Nankai University, Tianjin 300071, People's Republic of China.2Department of Electronic Engineering, Chang Gung University, 259, WenHwa 1st Road, KweiShan, 333, Taoyuan, Taiwan.
推荐引用方式 GB/T 7714	Yao L,Ao J,Jeng MJ,et al. CZTSe solar cells prepared by electrodeposition of Cu/Sn/Zn stack layer followed by selenization at low Se pressure.[J]. Nanoscale Res Lett,2014,Vol.9 No.1:678.
APA	Yao L.,Ao J.,Jeng MJ.,Bi J.,Gao S.,...&Chen JW..(2014).CZTSe solar cells prepared by electrodeposition of Cu/Sn/Zn stack layer followed by selenization at low Se pressure..Nanoscale Res Lett,Vol.9 No.1,678.
MLA	Yao L,et al."CZTSe solar cells prepared by electrodeposition of Cu/Sn/Zn stack layer followed by selenization at low Se pressure.".Nanoscale Res Lett Vol.9 No.1(2014):678.

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