| The structure and band gap design of high Si doping level AgGaSiSe (x=1/2) | |
| Zhang, SY; Mei, DJ; Du, X; Lin, ZS; Zhong, JB; Wu, YD; Xu, JL | |
| 刊名 | Journal of Solid State Chemistry
 |
| 2016 | |
| 卷号 | Vol.238页码:21-24 |
| 关键词 | Selenides Synthesis Crystal structure Band gap |
| ISSN号 | 0022-4596 |
| URL标识 | 查看原文 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/1841067 |
| 专题 | 四川大学 |
| 作者单位 | 1.Peking Univ, State Key Lab Rare Earth Mat Chem & Applicat, Coll Chem & Mol Engn, Beijing 100871, Peoples R China 2.Peking Univ, Beijing Natl Lab Mol Sci, Coll Chem & Mol Engn, Beijing 100871, Peoples R China 3.Chinese Acad Sci, Ctr Crystal Res & Dev, Key Lab Funct Crystals & Laser Technol, Beijing 100190, Peoples R China 4.Sichuan Univ Sci & Engn, Coll Chem & Pharmaceut Engn, Key Lab Green Catalysis, Higher Educ Inst Sichuan, Zigong 643000, Peoples R China 5.Shanghai Univ Engn Sci, Coll Chem & Chem Engn, Shanghai 201620, Peoples R China |
| 推荐引用方式 GB/T 7714 | Zhang, SY,Mei, DJ,Du, X,et al. The structure and band gap design of high Si doping level AgGaSiSe (x=1/2)[J]. Journal of Solid State Chemistry,2016,Vol.238:21-24. |
| APA | Zhang, SY.,Mei, DJ.,Du, X.,Lin, ZS.,Zhong, JB.,...&Xu, JL.(2016).The structure and band gap design of high Si doping level AgGaSiSe (x=1/2).Journal of Solid State Chemistry,Vol.238,21-24. |
| MLA | Zhang, SY,et al."The structure and band gap design of high Si doping level AgGaSiSe (x=1/2)".Journal of Solid State Chemistry Vol.238(2016):21-24. |
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