| Wide band gap design of new chalcogenide compounds: KSrPS and CsBaAsS | |
| Jiang, JQ; Mei, DJ; Gong, PF; Lin, ZS; Zhong, JB; Wu, YD | |
| 刊名 | RSC Advances
 |
| 2017 | |
| 卷号 | Vol.7 No.60页码:38044-38051 |
| ISSN号 | 2046-2069 |
| URL标识 | 查看原文 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/1840442 |
| 专题 | 四川大学 |
| 作者单位 | 1.Univ Chinese Acad Sci, Beijing 100190, Peoples R China 2.Chinese Acad Sci, Ctr Crystal Res & Dev, Key Lab Funct Crystals & Laser Technol, Beijing 100190, Peoples R China 3.Sichuan Univ Sci & Engn, Key Lab Green Catalysis Higher Educ, Inst Sichuan, Coll Chem & Environm Engn, Zigong 643000, Peoples R China 4.Shanghai Univ Engn Sci, Coll Chem & Chem Engn, Shanghai 201620, Peoples R China |
| 推荐引用方式 GB/T 7714 | Jiang, JQ,Mei, DJ,Gong, PF,et al. Wide band gap design of new chalcogenide compounds: KSrPS and CsBaAsS[J]. RSC Advances,2017,Vol.7 No.60:38044-38051. |
| APA | Jiang, JQ,Mei, DJ,Gong, PF,Lin, ZS,Zhong, JB,&Wu, YD.(2017).Wide band gap design of new chalcogenide compounds: KSrPS and CsBaAsS.RSC Advances,Vol.7 No.60,38044-38051. |
| MLA | Jiang, JQ,et al."Wide band gap design of new chalcogenide compounds: KSrPS and CsBaAsS".RSC Advances Vol.7 No.60(2017):38044-38051. |
| 个性服务 |
| 查看访问统计 |
| 相关权益政策 |
| 暂无数据 |
| 收藏/分享 |
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。
修改评论