Polymer Doping Enables a Two-Dimensional Electron Gas for High-Performance Homojunction Oxide Thin-Film Transistors. | |
Chen Yao; Huang Wei; Sangwan Vinod K; Wang Binghao; Zeng Li; Wang Gang; Huang Yan; Lu Zhiyun; Bedzyk Michael J; Hersam Mark C | |
刊名 | Advanced materials (Deerfield Beach, Fla.) |
2018 | |
页码 | e1805082 |
关键词 | 2D electron gases PEI-doped In2O3 homojunctions oxide electronics |
ISSN号 | 1521-4095 |
URL标识 | 查看原文 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/1832858 |
专题 | 四川大学 |
作者单位 | 1.Lamon Avenue, Skokie, IL, 60077, USA. 2.Sheridan Road, Evanston, IL, 60208, USA. Flexterra Inc., 3.Campus Drive, Evanston, IL, 60208, USA. Department of Materials Science and Engineering and the Argonne Northwestern Solar Energy Research Center , Northwestern University, 4.Sheridan Road, Evanston, IL, 60208, USA. Key Laboratory of Green Chemistry and Technology , College of Chemistry, Sichuan University, Chengdu, 610064, P. R. China. Department of Materials Science and Engineering, Northwestern University, Evanston, IL, 60208, USA. Applied Physics Program and the Materials Research Center, Northwestern University, 5.Department of Chemistry and the Materials Research Center, Northwestern University, |
推荐引用方式 GB/T 7714 | Chen Yao,Huang Wei,Sangwan Vinod K,et al. Polymer Doping Enables a Two-Dimensional Electron Gas for High-Performance Homojunction Oxide Thin-Film Transistors.[J]. Advanced materials (Deerfield Beach, Fla.),2018:e1805082. |
APA | Chen Yao.,Huang Wei.,Sangwan Vinod K.,Wang Binghao.,Zeng Li.,...&Facchetti Antonio.(2018).Polymer Doping Enables a Two-Dimensional Electron Gas for High-Performance Homojunction Oxide Thin-Film Transistors..Advanced materials (Deerfield Beach, Fla.),e1805082. |
MLA | Chen Yao,et al."Polymer Doping Enables a Two-Dimensional Electron Gas for High-Performance Homojunction Oxide Thin-Film Transistors.".Advanced materials (Deerfield Beach, Fla.) (2018):e1805082. |
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