Preparation of Inverted Pyramids by Electrochemical and Chemical Etching of n-Type Silicon under Thermodynamic Equilibrium State

	Preparation of Inverted Pyramids by Electrochemical and Chemical Etching of n-Type Silicon under Thermodynamic Equilibrium State
	Wang, Fuguo; Cao, Zhongyue; Liang, Aimin; Zhang, Xingkai; Qiang, Li; Zhang, Junyan
刊名	ECS Journal of Solid State Science and Technology
	2018-04-10
卷号	7 期号:4 页码:192-196
内容类型	期刊论文
源URL	[http://210.77.64.217/handle/362003/24318]
专题	兰州化学物理研究所_先进润滑与防护材料研究发展中心
通讯作者	Wang, Fuguo
作者单位	Lanzhou Institute of Chemical Physics, Chinese Academy of Science
推荐引用方式 GB/T 7714	Wang, Fuguo,Cao, Zhongyue,Liang, Aimin,et al. Preparation of Inverted Pyramids by Electrochemical and Chemical Etching of n-Type Silicon under Thermodynamic Equilibrium State[J]. ECS Journal of Solid State Science and Technology,2018,7(4):192-196.
APA	Wang, Fuguo,Cao, Zhongyue,Liang, Aimin,Zhang, Xingkai,Qiang, Li,&Zhang, Junyan.(2018).Preparation of Inverted Pyramids by Electrochemical and Chemical Etching of n-Type Silicon under Thermodynamic Equilibrium State.ECS Journal of Solid State Science and Technology,7(4),192-196.
MLA	Wang, Fuguo,et al."Preparation of Inverted Pyramids by Electrochemical and Chemical Etching of n-Type Silicon under Thermodynamic Equilibrium State".ECS Journal of Solid State Science and Technology 7.4(2018):192-196.