A large-grain and highly crystalline Cu₃BiS₃ thin film is successfully prepared by a dimethyl sulfoxide (DMSO)-based solution coating process. Without involving post sulfurization, Cu₃BiS₃ absorber with grain size of similar to 1 inn has been achieved via a short-time drying of spin-coated precursor film on a hot plate at relatively low temperatures (< 300 ℃). Our Cu₃BiS₃ film exhibits a direct band gap of 1.47 eV with high absorption coefficients (～7 x 10⁴ cm^-1). Hall effect measurements reveal a p-type conductivity with hole concentration of similar to 10¹⁶ cm^-3 and mobility of 52.83 cm²/(V s). Moreover, an initial Cu₃BiS₃ thin film solar cell with the device structure of glass/Mo/Cu₃BiS₃/CdS/ZnO/ITO/Al is fabricated, achieving a definite conversion efficiency of 0.17%. The mild preparation condition promises great potential of current method in realizing Cu₃BiS₃ solar cells on temperature-sensitive substrates such as flexible polymer through an energy efficient way. The Cu₃BiS₃ has thus been presented as a promising absorber material for solar cell applications.