Resonant level-induced high thermoelectric response in indium-doped GeTe

doi:10.1038/am.2016.203

	Resonant level-induced high thermoelectric response in indium-doped GeTe
	Wu, Lihua 1; Li, Xin 1,2; Wang, Shanyu 3; Zhang, Tiansong 4; Yang, Jiong 1; Zhang, Wenqing 1; Chen, Lidong 4; Yang, Jihui 3
刊名	NPG Asia Materials
	2017
卷号	9 期号:1
ISSN号	18844049
DOI	10.1038/am.2016.203
英文摘要	Resonant levels are promising for high-performance single-phase thermoelectric materials. Recently, phase-change materials have attracted much attention for energy conversion applications. As the energetic position of resonant levels could be temperature dependent, searching for dopants in phase-change materials, which can introduce resonant levels in both low and high temperature phases, remains challenging. In this study, possible distortions of the electronic density of states due to group IIIA elements (Ga, In, Tl) in GeTe are theoretically investigated. Resonant levels induced by indium dopants in both rhombohedral and cubic phase GeTe have been demonstrated. The experimental Seebeck coefficients of InxGe1 - xTe exhibit a large enhancement compared with those observed for other prior dopants. Indium dopants reduce the defect concentrations in GeTe, and thus, they lower the carrier concentrations and suppress the electronic component of the total thermal conductivity. The enhanced Seebeck coefficient, together with the suppressed thermal conductivity, leads to a reasonably high ZT of 1.3 at a temperature near 355 °C in In0.02Ge0.98Te. The corresponding average ZT is enhanced by 70% across the entire temperature range of the rhombohedral and cubic phases. These observations indicate that indium-doped GeTe is a promising base material for achieving an even higher thermoelectric performance. © The Author(s) 2017.
内容类型	期刊论文
源URL	[http://ir.sic.ac.cn/handle/331005/25468]
专题	中国科学院上海硅酸盐研究所
作者单位	1.Materials Genome Institute, Shanghai University, 99 Shangda Road, E-433, Shanghai; 200444, China; 2.Department of Physics, College of Sciences, Shanghai University, Shanghai, China; 3.Department of Materials Science and Engineering, University of Washington, 315 Roberts Hall, Box 352120, Seattle; WA; 98195, United States; 4.State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, China
推荐引用方式 GB/T 7714	Wu, Lihua,Li, Xin,Wang, Shanyu,et al. Resonant level-induced high thermoelectric response in indium-doped GeTe[J]. NPG Asia Materials,2017,9(1).
APA	Wu, Lihua.,Li, Xin.,Wang, Shanyu.,Zhang, Tiansong.,Yang, Jiong.,...&Yang, Jihui.(2017).Resonant level-induced high thermoelectric response in indium-doped GeTe.NPG Asia Materials,9(1).
MLA	Wu, Lihua,et al."Resonant level-induced high thermoelectric response in indium-doped GeTe".NPG Asia Materials 9.1(2017).