Effect of topological structure on photoluminescence of PbSe quantum dot-doped borosilicate glasses

doi:10.1111/jace.15331

	Effect of topological structure on photoluminescence of PbSe quantum dot-doped borosilicate glasses
	Xu, Zhousu 1,2; Liu, Xiaofeng 3; Jiang, Chun 4; Ma, Dewei 1; Ren, Jinjun 5; Cheng, Cheng 1,2; Qiu, Jianrong 6
刊名	Journal of the American Ceramic Society
	2018
卷号	101 期号:4 页码:1508-1515
ISSN号	00027820
DOI	10.1111/jace.15331
英文摘要	Borosilicate glasses doped with PbSe quantum dots (QDs) were prepared by a conventional melt-quenching process followed by heat treatment, which exhibit good thermal, chemical, and mechanical stabilities, and are amenable to fiber-drawing. A broad near infrared (NIR) photoluminescence (PL) emission (1070-1330 nm) band with large full-width at half-maximum (FWHM) values (189-266 nm) and notable Stokes shift (100-210 nm) was observed, which depended on the B2O3concentration. The PL lifetime was about 1.42-2.44 μs, and it showed a clear decrease with increasing the QDs size. The planar [BO3] triangle units forming the two-dimensional (2D) glass network structure clearly increased with increasing B2O3concentration, which could accelerate the movement of Pb2+and Se2−ions and facilitate the growth of PbSe QDs. The tunable broadband NIR PL emission of the PbSe QD-doped borosilicate glass may find potential application in ultra-wideband fiber amplifiers. © 2017 The American Ceramic Society
出版者	Blackwell Publishing Inc.
内容类型	期刊论文
源URL	[http://ir.sic.ac.cn/handle/331005/25178]
专题	中国科学院上海硅酸盐研究所
作者单位	1.Institute of Intelligent Optoelectronic Technology, Zhejiang University of Technology, Hangzhou, China; 2.Zhejiang Provincial Collaborative Innovation Center of High-end Laser Manufacturing Equipment, Hangzhou, China; 3.School of Materials Science and Engineering, Zhejiang University, Hangzhou, China; 4.State Key Laboratory of Advanced Optical Communication Systems and Networks, Shanghai Jiao Tong University, Shanghai, China; 5.Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai, China; 6.State Key Laboratory of Modern Optical Instrumentation, College of Optical Science and Engineering, Zhejiang University, Hangzhou, China
推荐引用方式 GB/T 7714	Xu, Zhousu,Liu, Xiaofeng,Jiang, Chun,et al. Effect of topological structure on photoluminescence of PbSe quantum dot-doped borosilicate glasses[J]. Journal of the American Ceramic Society,2018,101(4):1508-1515.
APA	Xu, Zhousu.,Liu, Xiaofeng.,Jiang, Chun.,Ma, Dewei.,Ren, Jinjun.,...&Qiu, Jianrong.(2018).Effect of topological structure on photoluminescence of PbSe quantum dot-doped borosilicate glasses.Journal of the American Ceramic Society,101(4),1508-1515.
MLA	Xu, Zhousu,et al."Effect of topological structure on photoluminescence of PbSe quantum dot-doped borosilicate glasses".Journal of the American Ceramic Society 101.4(2018):1508-1515.