Stress-induced reversible and irreversible ferroelectric domain switching

doi:10.1063/1.5020534

	Stress-induced reversible and irreversible ferroelectric domain switching
	Chen, Zibin ; Huang, Qianwei ; Wang, Feifei 1; Ringer, Simon P.; Luo, Haosu 3; Liao, Xiaozhou
刊名	APPLIED PHYSICS LETTERS
	2018
卷号	112 期号:15
ISSN号	0003-6951
DOI	10.1063/1.5020534
英文摘要	Ferroelectric materials have been extensively explored for applications in electronic devices because of their ferroelectric/ferroelastic domain switching behaviour under electric bias or mechanical stress. Recent findings on applying mechanical loading to manipulate reversible logical signals in non-volatile ferroelectric memory devices make ferroelectric materials more attractive to scientists and engineers. However, the dynamical microscopic structural behaviour of ferroelectric domains under stress is not well understood, which limits the applications of ferroelectric/ferroelastic switching in memory devices. Here, the kinetics of reversible and irreversible ferroelectric domain switching induced by mechanical stress in relaxor-based ferroelectrics was explored. Insitu transmission electron microscopy investigation revealed that 90 degrees ferroelastic and 180 degrees ferroelectric domain switching can be induced by low and high mechanical stresses. The nucleation and growth of nanoscale domains overwhelm the defect-induced pinning effect on the stable microdomain walls. This study provides deep insights for exploring the mechanical kinetics for ferroelectric/ferroelastic domains and a clear pathway to overcome the domain pinning effect of defects in ferroelectrics. Published by AIP Publishing.
学科主题	Physics, Applied
出版者	AMER INST PHYSICS
WOS记录号	WOS:000430002700027
资助机构	The authors are grateful for the scientific and technical support from the Australian Microscopy and Microanalysis Research Facility node at the University of Sydney. This research was financially supported by the Australian Research Council. This research was supported by the Faculty of Engineering and Information Technologies, The University of Sydney, under the Faculty Research Cluster Program. ; The authors are grateful for the scientific and technical support from the Australian Microscopy and Microanalysis Research Facility node at the University of Sydney. This research was financially supported by the Australian Research Council. This research was supported by the Faculty of Engineering and Information Technologies, The University of Sydney, under the Faculty Research Cluster Program.
内容类型	期刊论文
源URL	[http://ir.sic.ac.cn/handle/331005/25006]
专题	中国科学院上海硅酸盐研究所
作者单位	1.Univ Sydney, Sch Aerosp Mech & Mechatron Engn, Sydney, NSW 2006, Australia 2.Shanghai Normal Univ, Dept Phys, Key Lab Optoelect Mat & Device, Shanghai 200234, Peoples R China 3.Ringer, Simon P.] Univ Sydney, Australian Inst Nanoscale Sci & Technol, Sydney, NSW 2006, Australia 4.Chinese Acad Sci, Shanghai Inst Ceram, Key Lab Inorgan Funct Mat & Devices, Shanghai 200050, Peoples R China
推荐引用方式 GB/T 7714	Chen, Zibin,Huang, Qianwei,Wang, Feifei,et al. Stress-induced reversible and irreversible ferroelectric domain switching[J]. APPLIED PHYSICS LETTERS,2018,112(15).
APA	Chen, Zibin,Huang, Qianwei,Wang, Feifei,Ringer, Simon P.,Luo, Haosu,&Liao, Xiaozhou.(2018).Stress-induced reversible and irreversible ferroelectric domain switching.APPLIED PHYSICS LETTERS,112(15).
MLA	Chen, Zibin,et al."Stress-induced reversible and irreversible ferroelectric domain switching".APPLIED PHYSICS LETTERS 112.15(2018).