Reversible and nonvolatile ferroelectric control of two-dimensional electronic transport properties of ZrCuSiAs-type copper oxyselenide thin films with a layered structure

doi:10.1103/PhysRevMaterials.2.055003

	Reversible and nonvolatile ferroelectric control of two-dimensional electronic transport properties of ZrCuSiAs-type copper oxyselenide thin films with a layered structure
	Zhao, Xu-Wen ; Gao, Guan-Yin ; Yan, Jian-Min ; Chen, Lei ; Xu, Meng ; Zhao, Wei-Yao ; Xu, Zhi-Xue ; Guo, Lei ; Liu, Yu-Kuai ; Li, Xiao-Guang
刊名	PHYSICAL REVIEW MATERIALS
	2018
卷号	2 期号:5
ISSN号	2475-9953
DOI	10.1103/PhysRevMaterials.2.055003
英文摘要	Copper-based ZrCuSiAs-type compounds of LnCuChO (Ln = Bi and lanthanides, Ch = S, Se, Te) with a layered crystal structure continuously attract worldwide attention in recent years. Although their high-temperature (T >= 300 K) electrical properties have been intensively studied, their low-temperature electronic transport properties are little known. In this paper, we report the integration of ZrCuSiAs--type copper oxyselenide thin films of Bi-0. 94Pb(0.) CuSeO (BPCSO) with perovskite--type ferroelectric Pb(Mg1/3Nb2/3)O-3-PbTiO3 (PMN-PT) single crystals in the form of ferroelectric field effect devices that allow us to control the electronic properties (e.g., carrier density, magnetoconductance, dephasing length, etc.) of BPCSO films in a reversible and nonvolatile manner by polarization switching at room temperature. Combining ferroelectric gating and magnetotransport measurements with the Hikami--Larkin--Nagaoka theory, we demonstrate two--dimensional (2D) electronic transport characteristics and weak antilocalization effect as well as strong carrier-density-mediated competition between weak antilocalization and weak localization in BPCSO films. Our results show that ferroelectric gating using PMN-PT provides an effective and convenient approach to probe the carrier--density--related 2D electronic transport properties of ZrCuSiAs--type copper oxyselenide thin films.
学科主题	Materials Science, Multidisciplinary
出版者	AMER PHYSICAL SOC
WOS记录号	WOS:000433044400003
资助机构	This work was supported by the National Natural Science Foundation of China (Grant Nos. 51572278, 51790491, 51502129), the National Basic Research Program of China (Grant Nos. 2016YFA0300103 and 2015CB921201), and the Chinese Academy of Sciences (Grant No. KGZD-EW-T06). ; This work was supported by the National Natural Science Foundation of China (Grant Nos. 51572278, 51790491, 51502129), the National Basic Research Program of China (Grant Nos. 2016YFA0300103 and 2015CB921201), and the Chinese Academy of Sciences (Grant No. KGZD-EW-T06).
内容类型	期刊论文
源URL	[http://ir.sic.ac.cn/handle/331005/24911]
专题	中国科学院上海硅酸盐研究所
作者单位	1.[Zhao, Xu-Wen 2.Yan, Jian-Min 3.Chen, Lei 4.Xu, Meng 5.Zhao, Wei-Yao 6.Xu, Zhi-Xue 7.Guo, Lei 8.Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China 9.[Gao, Guan-Yin 10.Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Dept Phys, Hefei 230026, Anhui, Peoples R China
推荐引用方式 GB/T 7714	Zhao, Xu-Wen,Gao, Guan-Yin,Yan, Jian-Min,et al. Reversible and nonvolatile ferroelectric control of two-dimensional electronic transport properties of ZrCuSiAs-type copper oxyselenide thin films with a layered structure[J]. PHYSICAL REVIEW MATERIALS,2018,2(5).
APA	Zhao, Xu-Wen.,Gao, Guan-Yin.,Yan, Jian-Min.,Chen, Lei.,Xu, Meng.,...&Zheng, Ren-Kui.(2018).Reversible and nonvolatile ferroelectric control of two-dimensional electronic transport properties of ZrCuSiAs-type copper oxyselenide thin films with a layered structure.PHYSICAL REVIEW MATERIALS,2(5).
MLA	Zhao, Xu-Wen,et al."Reversible and nonvolatile ferroelectric control of two-dimensional electronic transport properties of ZrCuSiAs-type copper oxyselenide thin films with a layered structure".PHYSICAL REVIEW MATERIALS 2.5(2018).