Epitaxial growth of perovskite (111) 0.65PMN-0.35PT films directly on wurtzite GaN (0002) surface

doi:10.1007/s00339-018-1905-x

	Epitaxial growth of perovskite (111) 0.65PMN-0.35PT films directly on wurtzite GaN (0002) surface
	Xu, Xiaoke 1; Zhao, Junliang 2; Li, Guanjie 1; Xu, Jiayue ; Li, Xiaomin 1
刊名	APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
	2018
卷号	124 期号:7
ISSN号	0947-8396
DOI	10.1007/s00339-018-1905-x
英文摘要	PMN-PT films were deposited on GaN/sapphire substrates via pulsed laser deposition without any intermediate buffer layers, and epitaxial perovskite (111) 0.65PMN-0.35PT films on wurtzite GaN(0002) surfaces were obtained by adjusting the experimental parameters including substrates temperature and O pressure. The microstructures and electrical properties of PMN-PT/GaN heterostructure were characterized by reflection high-energy electron diffraction, X-ray diffraction, atom force microscope, transmission electron microscope and polarization-electric field (P-E) measurements. The as-grown PMN-PT films exhibit highly (111) oriented perovskite crystal structure. The in-plane orientation relationship of PMN-PT film with respect to GaN is (111)[11-2] PMN-PT//(0002)[11-20] GaN. A domain matching epitaxy model is proposed to account for the epitaxial growth mechanism of PMN-PT on GaN. The P-E curves show typical ferroelectric characteristics, while the remnant polarization and coercive field are about 18.1 C/cm and 75 kV/cm, respectively. This work provides a good start point for the further development of advanced electronic devices based on the integration of ferroelectric PMN-PT with wide-gap GaN semiconductor.
学科主题	Materials Science, Multidisciplinary ; Physics, Applied
出版者	SPRINGER HEIDELBERG
WOS记录号	WOS:000435450400001
资助机构	This work was supported by the National Key Research and Development Program of China (2016YFA0201103), the National Natural Science Foundation of China (Grant nos. 51572280 and 51602329), and the Foundation of the Shanghai Committee for Science and Technology (Grant no. 15JC1403600). ; This work was supported by the National Key Research and Development Program of China (2016YFA0201103), the National Natural Science Foundation of China (Grant nos. 51572280 and 51602329), and the Foundation of the Shanghai Committee for Science and Technology (Grant no. 15JC1403600).
内容类型	期刊论文
源URL	[http://ir.sic.ac.cn/handle/331005/24841]
专题	中国科学院上海硅酸盐研究所
作者单位	1.Shanghai Inst Technol, Sch Mat Sci & Engn, Shanghai 201418, Peoples R China 2.Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China 3.NanoArc Technol Pte Ltd, 1015 Geylang East Ave 3 02-131, Singapore 389730, Singapore
推荐引用方式 GB/T 7714	Xu, Xiaoke,Zhao, Junliang,Li, Guanjie,et al. Epitaxial growth of perovskite (111) 0.65PMN-0.35PT films directly on wurtzite GaN (0002) surface[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,2018,124(7).
APA	Xu, Xiaoke,Zhao, Junliang,Li, Guanjie,Xu, Jiayue,&Li, Xiaomin.(2018).Epitaxial growth of perovskite (111) 0.65PMN-0.35PT films directly on wurtzite GaN (0002) surface.APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,124(7).
MLA	Xu, Xiaoke,et al."Epitaxial growth of perovskite (111) 0.65PMN-0.35PT films directly on wurtzite GaN (0002) surface".APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 124.7(2018).