Influence of Proton Irradiation on Defect and Magnetism of Yb-doped ZnO Dluted Magnetic Semiconductor Thin Films
Chen Wei-Bin; Liu Xue-Chao; Zhuo Shi-Yi; Chai Jun6; Shi Er-Wei
刊名JOURNAL OF INORGANIC MATERIALS
2018
卷号33期号:8页码:903
关键词Yb-doped ZnO proton irradiation diluted magnetic semiconductor ferromagnetism
ISSN号1000-324X
DOI10.15541/jim20170420
英文摘要Yb-doped ZnO thin films were prepared by inductively coupled plasma enhanced physical vapor deposition method, the as-deposited Zn0.985Yb0.015O thin films were irradiated by proton with different doses. X-ray diffraction, X-ray photoelectron spectroscopy, positron annihilation spectroscopy, and magnetic property measurement were used to study the defect and ferromagnetism. The magnetic property measurement results indicate that the saturation magnetization of Zn0.985Yb0.015O thin films increases with the increment of irradiation doses, and reaches the maximum value at 6x10(15) ions/cm(2). With the further increase in irradiation doses, the saturation magnetization decreases. The positron annihilation measurement reveals that Zn vacancy-related defects dominate in proton irradiated Zn0.985Yb0.015O thin films. It is found that dependency of saturation magnetization on irradiation doses exhibits the same behavior with the amount of Zn vacancy-related defects on irradiation doses. It is experimentally demonstrated that the ferromagnetism of proton irradiated Yb-doped ZnO thin films is mainly influenced by Zn vacancy-related defects.
学科主题Materials Science, Ceramics
出版者SCIENCE PRESS
WOS记录号WOS:000439106600014
资助机构National Natural Science Foundation of China (51602331) ; National Key Research and Development Program of China (2016YFB0400401, 2017YFB0405700). ; National Natural Science Foundation of China (51602331) ; National Key Research and Development Program of China (2016YFB0400401, 2017YFB0405700).
内容类型期刊论文
源URL[http://ir.sic.ac.cn/handle/331005/24727]  
专题中国科学院上海硅酸盐研究所
作者单位1.[Chen Wei-Bin
2.Liu Xue-Chao
3.Zhuo Shi-Yi
4.Chai Jun
5.Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 200050, Peoples R China
6.[Chen Wei-Bin
7.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
推荐引用方式
GB/T 7714
Chen Wei-Bin,Liu Xue-Chao,Zhuo Shi-Yi,et al. Influence of Proton Irradiation on Defect and Magnetism of Yb-doped ZnO Dluted Magnetic Semiconductor Thin Films[J]. JOURNAL OF INORGANIC MATERIALS,2018,33(8):903, 908.
APA Chen Wei-Bin,Liu Xue-Chao,Zhuo Shi-Yi,Chai Jun,&Shi Er-Wei.(2018).Influence of Proton Irradiation on Defect and Magnetism of Yb-doped ZnO Dluted Magnetic Semiconductor Thin Films.JOURNAL OF INORGANIC MATERIALS,33(8),903.
MLA Chen Wei-Bin,et al."Influence of Proton Irradiation on Defect and Magnetism of Yb-doped ZnO Dluted Magnetic Semiconductor Thin Films".JOURNAL OF INORGANIC MATERIALS 33.8(2018):903.
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