Ultrasensitive negative photoresponse in 2D Cr2Ge2Te6 photodetector with light-induced carrier trapping

doi:10.1088/1361-6528/aaded6

	Ultrasensitive negative photoresponse in 2D Cr2Ge2Te6 photodetector with light-induced carrier trapping
	Xie, Liu 1; Guo, Lei 3; Yu, Wenzhi 4; Kang, Tingting 5; Zheng, Ren-Kui ; Zhang, Kai 1
刊名	NANOTECHNOLOGY
	2018
卷号	29 期号:46
关键词	photodetector negative photoconductivity weak light 2D Cr2Ge2Te6
ISSN号	0957-4484
DOI	10.1088/1361-6528/aaded6
英文摘要	Cr2Ge2Te6, a layered ferromagnetic semiconductor, has triggered extensive research interest due to its fantastic ferromagnetism and semiconducting characteristics as well as potential applications in next-generation spintronic and nanoelectronic devices. On the basis of its ferromagnetism, combined with rich electronic and optical properties, Cr2Ge2Te6 could be a promising candidate for optoelectronics including magnetophotonics and photodetectors. However, there are no relevant studies addressing this to date. In this work, we comprehensively investigated the photoresponse characteristics of few-layer Cr2Ge2Te6-based detectors. An uncommon negative photoconductivity (NPC) and correlated mechanism are explored with the Cr2Ge2Te6 photodetector. It is found that, both NPC and positive photoconductivity (PPC) may exist in an individual Cr2Ge2Te6 device, which are adjustable by control of the incident light intensity. More significantly, the NPC behavior enables ultrasensitive photoresponses of the Cr2Ge2Te6 photodetectors, where the detection of a weak light with an incident power intensity as low as 0.04 pW and a high responsivity of 340 AW(-1) is achieved. This extraordinary performance demonstrates that the two-dimensional (2D) Cr2Ge2Te6 holds great promise for applications in ultraweak light detection.
学科主题	Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
出版者	IOP PUBLISHING LTD
WOS记录号	WOS:000445345700001
资助机构	This work was supported by the National Natural Science Foundation of China (Grant Nos. 61875223, 11574349, 11204334, 61475178, 51572278), the Natural Science Foundation of Jiangsu province (Grant Nos. BK20150365, BK20170424), the Key Research Program of Frontier Sciences of Chinese Academy of Sciences (QYZDB-SSW-SLH031), and the Hundred Talent Program of Chinese Academy of Sciences. ; This work was supported by the National Natural Science Foundation of China (Grant Nos. 61875223, 11574349, 11204334, 61475178, 51572278), the Natural Science Foundation of Jiangsu province (Grant Nos. BK20150365, BK20170424), the Key Research Program of Frontier Sciences of Chinese Academy of Sciences (QYZDB-SSW-SLH031), and the Hundred Talent Program of Chinese Academy of Sciences.
内容类型	期刊论文
源URL	[http://ir.sic.ac.cn/handle/331005/24629]
专题	中国科学院上海硅酸盐研究所
作者单位	1.Univ Sci & Technol China, Sch Nano Technol & Nano Bion, Hefei 230026, Anhui, Peoples R China 2.Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion SINANO, Key Lab Nanodevices & Applicat, I Lab, Suzhou 215123, Jiangsu, Peoples R China 3.Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China 4.Southeast Univ, Sch Phys, Nanjing 211189, Jiangsu, Peoples R China 5.Monash Univ, Dept Mat Sci & Engn, Fac Engn, Clayton, Vic 3168, Australia 6.Chinese Acad Sci, Shanghai Inst Tech Phys, State Key Lab Infrared Phys, Shanghai 200083, Peoples R China 7.Nanchang Univ, Sch Mat Sci & Engn, Nanchang 330031, Jiangxi, Peoples R China
推荐引用方式 GB/T 7714	Xie, Liu,Guo, Lei,Yu, Wenzhi,et al. Ultrasensitive negative photoresponse in 2D Cr2Ge2Te6 photodetector with light-induced carrier trapping[J]. NANOTECHNOLOGY,2018,29(46).
APA	Xie, Liu,Guo, Lei,Yu, Wenzhi,Kang, Tingting,Zheng, Ren-Kui,&Zhang, Kai.(2018).Ultrasensitive negative photoresponse in 2D Cr2Ge2Te6 photodetector with light-induced carrier trapping.NANOTECHNOLOGY,29(46).
MLA	Xie, Liu,et al."Ultrasensitive negative photoresponse in 2D Cr2Ge2Te6 photodetector with light-induced carrier trapping".NANOTECHNOLOGY 29.46(2018).