Room-temperature plasmonic resonant absorption for grating-gate GaN HEMTs in far infrared terahertz domain

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	Room-temperature plasmonic resonant absorption for grating-gate GaN HEMTs in far infrared terahertz domain
	W.D.Hu L.Wang X.S.Chen N.Guo J.S.Miao A.Q.Yu W.Lu
刊名	Opt Quant Electron
	2013
卷号	45 期号:7
关键词	Plasmonicresonantabsorption Gratinggate Finitedifferencetimedomain (Fdtd)Numericalsimulation Plasmonwave Farinfraredterahertzdetection Ganhemts
英文摘要	The plasmonic resonant phenomenon in the terahertz wave band for GaN high electron mobility transistors is investigated by using a finite difference time domain method. Strong resonant absorptions can be obtained where a large area slit grating-gate serves both as electrodes and coupler. Such kinds of plasmonic resonant detection devices are compatible to the well-developed GaN process, and possibly overcome the difficulty in fabricating ultra-short-gate devices for terahertz applications.
学科主题	红外基础研究
WOS记录号	WOS:000321764100022
公开日期	2014-11-10
内容类型	期刊论文
源URL	[http://202.127.1.142/handle/181331/7760]
专题	上海技术物理研究所_上海技物所
推荐引用方式 GB/T 7714	W.D.Hu L.Wang X.S.Chen N.Guo J.S.Miao A.Q.Yu W.Lu. Room-temperature plasmonic resonant absorption for grating-gate GaN HEMTs in far infrared terahertz domain[J]. Opt Quant Electron,2013,45(7).
APA	W.D.Hu L.Wang X.S.Chen N.Guo J.S.Miao A.Q.Yu W.Lu.(2013).Room-temperature plasmonic resonant absorption for grating-gate GaN HEMTs in far infrared terahertz domain.Opt Quant Electron,45(7).
MLA	W.D.Hu L.Wang X.S.Chen N.Guo J.S.Miao A.Q.Yu W.Lu."Room-temperature plasmonic resonant absorption for grating-gate GaN HEMTs in far infrared terahertz domain".Opt Quant Electron 45.7(2013).