Edge Structural Stability and Kinetics of Graphene Chemical Vapor Deposition Growth

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	Edge Structural Stability and Kinetics of Graphene Chemical Vapor Deposition Growth
	Shu, HB; Chen, XS; Tao, XM; Ding, F
刊名	ACS NANO
	2012
卷号	6 期号:4
英文摘要	The energetics and growth kinetics of graphene edges during CVD growth on Cu(111) and other catalyst surfaces are explored by density functional theory (DFT) calculations. Different from graphene edges In vacuum, the reconstructions of both armchair (AC) and zigzag (ZZ) edges are energetically less stable because of the passivation of the edges by the catalytic surface. Furthermore, we predicated that, on the most used Cu(111) catalytic surface, each AC-like site on the edge is intended to be passivated by a Cu atom. Such an unexpected passivation significantly lowers the barrier of Incorporating carbon atoms onto the graphene edge from 2.5 to 0.8 eV and therefore results in a very fast growth of the AC edge. These theoretical results are successfully applied to explain the broad experimental observations that the ZZ egde is the dominating edge type of growing graphene islands on a Cu surface.
WOS记录号	WOS:000303099300045
公开日期	2013-03-18
内容类型	期刊论文
源URL	[http://202.127.1.142/handle/181331/7093]
专题	上海技术物理研究所_上海技物所
推荐引用方式 GB/T 7714	Shu, HB,Chen, XS,Tao, XM,et al. Edge Structural Stability and Kinetics of Graphene Chemical Vapor Deposition Growth[J]. ACS NANO,2012,6(4).
APA	Shu, HB,Chen, XS,Tao, XM,&Ding, F.(2012).Edge Structural Stability and Kinetics of Graphene Chemical Vapor Deposition Growth.ACS NANO,6(4).
MLA	Shu, HB,et al."Edge Structural Stability and Kinetics of Graphene Chemical Vapor Deposition Growth".ACS NANO 6.4(2012).