The mechanism of negative magnetoresistance in nondegenerate p-type Hg1-xMnxTe (x > 0.17) monocrystal

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	The mechanism of negative magnetoresistance in nondegenerate p-type Hg1-xMnxTe (x > 0.17) monocrystal
	Zhu, LQ; Lin, T; Guo, SL; Chu, JH
刊名	ACTA PHYSICA SINICA
	2012
卷号	61 期号:8
英文摘要	It is important to study the mechanism of negative magnetoresistance (MR) in magnetic semiconductors for the correct understanding of the sp-d interactions between carriers and magnetic ions. In this work, temperature-dependent Hall effect (10-300 K) and magnetic susceptibility (5-300 K) are measured for the study of negative MR and paramagnetic enhancement of nondegenerate p-type Hg1-xMnxTe (x > 0.17) monocrystal. As temperature decreases, both negative MR and susceptibility show the same behaviors, each of which contains an exponentially changing temperature function exp(-K/T). According to the theory of impurity energy level in semimagnetic semiconductor, magnetic field can lead to the spin-splitting of acceptor level and result in reducing the binding energy of acceptors, which is responsible mainly for the negative MR in nondegenerate p-type Hg1-xMnx Te monocrystal.
WOS记录号	WOS:000303900900055
公开日期	2013-03-18
内容类型	期刊论文
源URL	[http://202.127.1.142/handle/181331/7089]
专题	上海技术物理研究所_上海技物所
推荐引用方式 GB/T 7714	Zhu, LQ,Lin, T,Guo, SL,et al. The mechanism of negative magnetoresistance in nondegenerate p-type Hg1-xMnxTe (x > 0.17) monocrystal[J]. ACTA PHYSICA SINICA,2012,61(8).
APA	Zhu, LQ,Lin, T,Guo, SL,&Chu, JH.(2012).The mechanism of negative magnetoresistance in nondegenerate p-type Hg1-xMnxTe (x > 0.17) monocrystal.ACTA PHYSICA SINICA,61(8).
MLA	Zhu, LQ,et al."The mechanism of negative magnetoresistance in nondegenerate p-type Hg1-xMnxTe (x > 0.17) monocrystal".ACTA PHYSICA SINICA 61.8(2012).