The important features of V-Hg-related defects in arsenic-doped HgCdTe

	The important features of V-Hg-related defects in arsenic-doped HgCdTe
	Duan, H; Dong, YZ; Lin, ZP; Huang, Y; Chen, XS; Lu, W
刊名	SOLID STATE COMMUNICATIONS
	2012
卷号	152 期号:18
英文摘要	The as-grown arsenic-doped HgCdTe typically exhibits compensated n-type conductivity. Based on first-principles calculations, we identify Hg vacancies (V-Hg) as a dominant defect species involved in the compensation. Arsenic donor (As-Hg) and V-Hg acceptor no doubt tend to combine into complex defects but little has been recognized about the features of the complex defects in precious studies. These features outlined in this work enable us to provide a consistent explanation for arsenic activation mechanism proposed by Zandian et al. [7] and Berding et al. [8]. (C) 2012 Elsevier Ltd. All rights reserved.
WOS记录号	WOS:000308776600004
公开日期	2013-03-18
内容类型	期刊论文
源URL	[http://202.127.1.142/handle/181331/6993]
专题	上海技术物理研究所_上海技物所
推荐引用方式 GB/T 7714	Duan, H,Dong, YZ,Lin, ZP,et al. The important features of V-Hg-related defects in arsenic-doped HgCdTe[J]. SOLID STATE COMMUNICATIONS,2012,152(18).
APA	Duan, H,Dong, YZ,Lin, ZP,Huang, Y,Chen, XS,&Lu, W.(2012).The important features of V-Hg-related defects in arsenic-doped HgCdTe.SOLID STATE COMMUNICATIONS,152(18).
MLA	Duan, H,et al."The important features of V-Hg-related defects in arsenic-doped HgCdTe".SOLID STATE COMMUNICATIONS 152.18(2012).