Activity dependent post-tetanic potentiation of starch-based biopolymer electrolyte gated oxide synaptic transistors | |
Guo, Li Qiang; Tao, Jian; Gao, Wan Tian; Yu, Fei; Xiao, Hui; Ding, Jian Ning; Zhu, Li Qiang | |
刊名 | JOURNAL OF PHYSICS D-APPLIED PHYSICS |
2018 | |
卷号 | 51期号:49 |
关键词 | Double-layer Transistors Plasticity Electronics Architectures Networks Devices Systems Protein Memory |
英文摘要 | Recently, neuromorphic devices have attracted great attentions in the field of brain-inspired neuromorphic engineering. As an important form of short-term synaptic plasticity, post-tetanic potentiation (PTP) plays a crucial role in the formation of short-term memory in biological nervous system. Here, indium-tin-oxide synaptic transistors were proposed by using solution-processed starch-based biopolymer electrolytes as gate dielectrics, demonstrating good electrical performances at a low operation voltage of 1 V. Short-term plasticities were mimicked on the proposed oxide synaptic transistors. PTP behaviors were demonstrated on the synaptic devices. Furthermore, effects of prior history of synaptic activity on PTP responses have been discussed in detail. The proposed synaptic transistors may have potential applications in neuromorphic system. |
学科主题 | Materials Science |
语种 | 英语 |
公开日期 | 2018-12-04 |
内容类型 | 期刊论文 |
源URL | [http://ir.nimte.ac.cn/handle/174433/16973] |
专题 | 2018专题 |
推荐引用方式 GB/T 7714 | Guo, Li Qiang,Tao, Jian,Gao, Wan Tian,et al. Activity dependent post-tetanic potentiation of starch-based biopolymer electrolyte gated oxide synaptic transistors[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2018,51(49). |
APA | Guo, Li Qiang.,Tao, Jian.,Gao, Wan Tian.,Yu, Fei.,Xiao, Hui.,...&Zhu, Li Qiang.(2018).Activity dependent post-tetanic potentiation of starch-based biopolymer electrolyte gated oxide synaptic transistors.JOURNAL OF PHYSICS D-APPLIED PHYSICS,51(49). |
MLA | Guo, Li Qiang,et al."Activity dependent post-tetanic potentiation of starch-based biopolymer electrolyte gated oxide synaptic transistors".JOURNAL OF PHYSICS D-APPLIED PHYSICS 51.49(2018). |
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