Insertion of NiO electron blocking layer in fabrication of GaN-organic heterostructures

CORC > 宁波材料技术与工程研究所 > 中国科学院宁波材料技术与工程研究所 > 2018专题

	Insertion of NiO electron blocking layer in fabrication of GaN-organic heterostructures
	Bo, Baoxue; Li, Junmei; Guo, Wei; Jiang, Jie'an; Gao, Pingqi; Ye, Jichun
刊名	JAPANESE JOURNAL OF APPLIED PHYSICS
	2018
卷号	57 期号:3
关键词	Light-emitting-diodes Single-crystal Gan Thin-films Photodetectors Heterojunction
英文摘要	We report the fabrication of a NiO thin film on top of an n-type GaN epitaxial layer. The electron-blocking capability of NiO in a hybrid organic/inorganic heterostructure consisting of n-GaN/NiO/poly(3,4-ethylenedioxythiophene): poly(styrene sulfonate) (PEDOT: PSS) is discussed. Surface morphology, crystallography orientation, bandgap, and fermi level information of NiO films were investigated in detail. A rectifying property consistent with the proposed band diagram was observed in the current-voltage measurement. Theoretical analysis also demonstrated the effective electron blocking due to band alignment and a more balanced carrier distribution inside the GaN region with NiO inserted into the n-GaN/PEDOT: PSS heterostructure. This work provides a promising approach to the fabrication of high-efficiency hybrid optoelectronic devices. (C) 2018 The Japan Society of Applied Physics
学科主题	Engineering ; Polymer Science
语种	英语
公开日期	2018-12-04
内容类型	期刊论文
源URL	[http://ir.nimte.ac.cn/handle/174433/16790]
专题	2018专题
推荐引用方式 GB/T 7714	Bo, Baoxue,Li, Junmei,Guo, Wei,et al. Insertion of NiO electron blocking layer in fabrication of GaN-organic heterostructures[J]. JAPANESE JOURNAL OF APPLIED PHYSICS,2018,57(3).
APA	Bo, Baoxue,Li, Junmei,Guo, Wei,Jiang, Jie'an,Gao, Pingqi,&Ye, Jichun.(2018).Insertion of NiO electron blocking layer in fabrication of GaN-organic heterostructures.JAPANESE JOURNAL OF APPLIED PHYSICS,57(3).
MLA	Bo, Baoxue,et al."Insertion of NiO electron blocking layer in fabrication of GaN-organic heterostructures".JAPANESE JOURNAL OF APPLIED PHYSICS 57.3(2018).