Characterisation of amorphous/nanocrystalline multilayer Si3N4-Si3N4/Si2N2O films prepared by alternately sputtering

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	Characterisation of amorphous/nanocrystalline multilayer Si3N4-Si3N4/Si2N2O films prepared by alternately sputtering
	Liu, Eryong; Pu, Jibin; Zeng, Zhixiang; Wang, Yongxin; Zhao, Wenjie
刊名	SURFACE ENGINEERING
	2017
卷号	33 期号:8 页码:633-641
ISSN号	0267-0844
英文摘要	By using direct current (DC) and radio frequency (RF) co-sputtering deposition, multilayer Si3N4 films composed of alternately DC layer and RF layer were prepared. Phase composition, microstructure, and hardness/toughness of different Si3N4 films were studied. X-ray diffraction results showed that DC layer was amorphous Si3N4 film, while RF layer was nanocrystalline Si3N4 film. The hardness of amorphous Si3N4 film was higher than that of nanocrystalline Si3N4 film and the plasticity of nanocrystalline Si3N4 film was higher than that of amorphous Si3N4 film. Furthermore, the hardness/toughness of multilayer Si3N4 films was obviously higher than that of the single Si3N4 film and the plasticity was higher than that of single nanocrystalline Si3N4 film, which can be attributed to the fact that a large number of interface hindered the increasing of particles, thus, the fine particles and the interface strengthened the multilayer films, while the propagation of micro-crack was prevented by amorphous/nanocrystalline layer of multilayer Si3N4 film.
公开日期	2017-12-25
内容类型	期刊论文
源URL	[http://ir.nimte.ac.cn/handle/174433/14059]
专题	2017专题
推荐引用方式 GB/T 7714	Liu, Eryong,Pu, Jibin,Zeng, Zhixiang,et al. Characterisation of amorphous/nanocrystalline multilayer Si3N4-Si3N4/Si2N2O films prepared by alternately sputtering[J]. SURFACE ENGINEERING,2017,33(8):633-641.
APA	Liu, Eryong,Pu, Jibin,Zeng, Zhixiang,Wang, Yongxin,&Zhao, Wenjie.(2017).Characterisation of amorphous/nanocrystalline multilayer Si3N4-Si3N4/Si2N2O films prepared by alternately sputtering.SURFACE ENGINEERING,33(8),633-641.
MLA	Liu, Eryong,et al."Characterisation of amorphous/nanocrystalline multilayer Si3N4-Si3N4/Si2N2O films prepared by alternately sputtering".SURFACE ENGINEERING 33.8(2017):633-641.