Improved short-circuit current density of a-Si:H thin film solar cells with n-type silicon carbide layer
Yang, Weiguang; Duan, Juanmei; Wang, Weiyan; Li, Hongjiang; Huang, Jinhua; Fang, Xuyang; Song, Weijie
刊名JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
2017
卷号28期号:5页码:3955-3961
ISSN号0957-4522
英文摘要In this work, the performance of p-i-n hydrogenated amorphous silicon thin film solar cells by adopting n-type silicon carbide (n-SiCx:H) layer was investigated. By varying CH4/SiH4 gas flow ratio, refractive index and electrical conductivity of n-SiCx:H thin films were changed in the range of 3.4 to 3.8 and 1.48E-5 to 1.24 S/cm, respectively. Compared with solar cells with n-Si:H/Ag configuration, short-circuit current density (J (sc) ) of solar cells with n-SiCx:H/Ag configuration was improved up to 8.4%, which was comparable with that of solar cells with n-Si:H/ZnO/Ag configuration. Improved J (sc) was related with enhanced spectral response at long wavelength of 500-800 nm. It was supposed that the decreased refractive index of n-SiCx:H layer resulted in the increased back reflectance, which contributed to the improved J (sc). Our experiments demonstrated that n-SiCx:H thin films were attractive choice because they functioned both as n-layer and interlayer in back reflector, and their deposition method was compatible with preparation process of solar cells.
公开日期2017-12-25
内容类型期刊论文
源URL[http://ir.nimte.ac.cn/handle/174433/13947]  
专题2017专题
推荐引用方式
GB/T 7714
Yang, Weiguang,Duan, Juanmei,Wang, Weiyan,et al. Improved short-circuit current density of a-Si:H thin film solar cells with n-type silicon carbide layer[J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2017,28(5):3955-3961.
APA Yang, Weiguang.,Duan, Juanmei.,Wang, Weiyan.,Li, Hongjiang.,Huang, Jinhua.,...&Song, Weijie.(2017).Improved short-circuit current density of a-Si:H thin film solar cells with n-type silicon carbide layer.JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,28(5),3955-3961.
MLA Yang, Weiguang,et al."Improved short-circuit current density of a-Si:H thin film solar cells with n-type silicon carbide layer".JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS 28.5(2017):3955-3961.
个性服务
查看访问统计
相关权益政策
暂无数据
收藏/分享
所有评论 (0)
暂无评论
 

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。


©版权所有 ©2017 CSpace - Powered by CSpace