Realization of tunable artificial synapse and memory based on amorphous oxide semiconductor transistor

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	Realization of tunable artificial synapse and memory based on amorphous oxide semiconductor transistor
	Dai, Mingzhi; Wang, Weiliang; Wang, Pengjun; Iqbal, Muhammad Zahir; Annabi, Nasim; Amin, Nasir
刊名	SCIENTIFIC REPORTS
	2017
卷号	7 页码:10997
ISSN号	2045-2322
英文摘要	Recently, advanced designs and materials emerge to study biologically inspired neuromorphic circuit, such as oxide semiconductor devices. The existence of mobile ions in the oxide semiconductors could be somewhat regarded to be similar with the case of the ions movements among the neurons and synapses in the brain. Most of the previous studies focus on the spike time, pulse number and material species: however, a quantitative modeling is still needed to study the voltage dependence of the relaxation process of synaptic devices. Here, the gate pulse stimulated currents of oxide semiconductor devices have been employed to mimic and investigate artificial synapses functions. The modeling for relaxation process of important synaptic behaviors, excitatory post-synaptic current (EPSC), has been updated as a stretched-exponential function with voltage factors in a more quantitative way. This quantitative modeling investigation of representative synaptic transmission bias impacts would help to better simulate, realize and thus control neuromorphic computing.
公开日期	2017-12-25
内容类型	期刊论文
源URL	[http://ir.nimte.ac.cn/handle/174433/13630]
专题	2017专题
推荐引用方式 GB/T 7714	Dai, Mingzhi,Wang, Weiliang,Wang, Pengjun,et al. Realization of tunable artificial synapse and memory based on amorphous oxide semiconductor transistor[J]. SCIENTIFIC REPORTS,2017,7:10997.
APA	Dai, Mingzhi,Wang, Weiliang,Wang, Pengjun,Iqbal, Muhammad Zahir,Annabi, Nasim,&Amin, Nasir.(2017).Realization of tunable artificial synapse and memory based on amorphous oxide semiconductor transistor.SCIENTIFIC REPORTS,7,10997.
MLA	Dai, Mingzhi,et al."Realization of tunable artificial synapse and memory based on amorphous oxide semiconductor transistor".SCIENTIFIC REPORTS 7(2017):10997.