High performance, top-emitting, quantum dot light-emitting diodes with all solution-processed functional layers
Tang, Z. B.; J. Lin; L. S. Wang; Y. Lv; Y. S. Hu; Y. Fan; X. Y. Guo; J. L. Zhao; Y. J. Wang and X. Y. Liu
刊名Journal of Materials Chemistry C
2017
卷号5期号:35
英文摘要We report all solution-processed manufacture of high performance top-emitting (TE) quantum dot light-emitting diodes (QLEDs) with an aluminum (Al) film as bottom electrode and a homogeneous molybdenum oxide (MoO3) film as hole injection layer deposited on top of Al from water solution. With an optimal organic light outcoupling layer over the top electrode to depress the multiple light beam interference effect, the QLEDs show a maximum luminance and current efficiency of 151 000 cd m(-2) and 33.7 cd A(-1), respectively, attaining a nearly Lambertian light source. Especially, they exhibit a maximum external quantum efficiency of 7.4%. All solution-processed fabrication of these TE QLEDs is further implemented on some active light display samples of Arabic numerals with 15 x 15 mm(2) active area. The resulting simple passive matrix quantum dot light emitting displays possess excellent photoelectric characteristics, which represents a step toward practical application.
语种英语
内容类型期刊论文
源URL[http://ir.ciomp.ac.cn/handle/181722/59215]  
专题长春光学精密机械与物理研究所_中科院长春光机所知识产出
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GB/T 7714
Tang, Z. B.,J. Lin,L. S. Wang,et al. High performance, top-emitting, quantum dot light-emitting diodes with all solution-processed functional layers[J]. Journal of Materials Chemistry C,2017,5(35).
APA Tang, Z. B..,J. Lin.,L. S. Wang.,Y. Lv.,Y. S. Hu.,...&Y. J. Wang and X. Y. Liu.(2017).High performance, top-emitting, quantum dot light-emitting diodes with all solution-processed functional layers.Journal of Materials Chemistry C,5(35).
MLA Tang, Z. B.,et al."High performance, top-emitting, quantum dot light-emitting diodes with all solution-processed functional layers".Journal of Materials Chemistry C 5.35(2017).
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