Effect of Ti additions on structure and phase stability of Sb2Te3 thin films by experimental and theoretical methods
Zhang, L; Song, SN; Xi, W; Li, L; Song, ZT
刊名JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
2018
卷号29期号:6页码:4704-4710
关键词Crystallization Behavior Raman-scattering
ISSN号0957-4522
DOI10.1007/s10854-017-8422-0
文献子类期刊论文
英文摘要Influence of Ti additions in Sb2Te3 thin films on structure and phase stability was studied by experiments together with theoretical calculations. The incorporation of Ti atoms in the Sb2Te3 thin films caused formation of finer grains. By X-ray photoelectron spectroscopy and ab initio calculation, both the Sb and Te atoms are likely to be replaced by the Ti atoms to form Ti-Sb and Ti-Te covalent bonds. It suggests that the Ti atoms locate in Te1 position and interstice of the lattice.
语种英语
WOS记录号WOS:000425763100038
内容类型期刊论文
源URL[http://ir.sinap.ac.cn/handle/331007/28983]  
专题上海应用物理研究所_中科院上海应用物理研究所2011-2017年
作者单位1.Zhang, L
2.Song, SN
3.Xi, W
4.Li, L
5.Song, ZT
推荐引用方式
GB/T 7714
Zhang, L,Song, SN,Xi, W,et al. Effect of Ti additions on structure and phase stability of Sb2Te3 thin films by experimental and theoretical methods[J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2018,29(6):4704-4710.
APA Zhang, L,Song, SN,Xi, W,Li, L,&Song, ZT.(2018).Effect of Ti additions on structure and phase stability of Sb2Te3 thin films by experimental and theoretical methods.JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,29(6),4704-4710.
MLA Zhang, L,et al."Effect of Ti additions on structure and phase stability of Sb2Te3 thin films by experimental and theoretical methods".JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS 29.6(2018):4704-4710.
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