Resistive memory devices based on a triphenylamine-decorated non-precious cobalt(II) bis-terpyridine complex

	Resistive memory devices based on a triphenylamine-decorated non-precious cobalt(II) bis-terpyridine complex
	Tang, Jian-Hong 1,2; Sun, Tian-Ge 1,2; Shao, Jiang-Yang 1; Gong, Zhong-Liang 1; Zhong, Yu-Wu 1,2
刊名	CHEMICAL COMMUNICATIONS
	2017-11-11
卷号	53 期号:87 页码:11925-11928
英文摘要	The ITO/active material/Au sandwiched devices of a cobalt(II) bis-terpyridine complex decorated with two triphenylamine motifs display appealing flash-type resistive switching with a large ON/OFF ratio ( 4103) and low operating voltages (< +/- 3 V). In contrast, devices with the triphenylamine-appended terpyridine ligand show WORM-type memory behaviour.
语种	英语
内容类型	期刊论文
源URL	[http://ir.iccas.ac.cn/handle/121111/39134]
专题	化学研究所_光化学实验室
作者单位	1.Chinese Acad Sci, Inst Chem, CAS Res Educ Ctr Excellence Mol Sci, CAS Key Lab Photochem, Beijing 100190, Peoples R China 2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China
推荐引用方式 GB/T 7714	Tang, Jian-Hong,Sun, Tian-Ge,Shao, Jiang-Yang,et al. Resistive memory devices based on a triphenylamine-decorated non-precious cobalt(II) bis-terpyridine complex[J]. CHEMICAL COMMUNICATIONS,2017,53(87):11925-11928.
APA	Tang, Jian-Hong,Sun, Tian-Ge,Shao, Jiang-Yang,Gong, Zhong-Liang,&Zhong, Yu-Wu.(2017).Resistive memory devices based on a triphenylamine-decorated non-precious cobalt(II) bis-terpyridine complex.CHEMICAL COMMUNICATIONS,53(87),11925-11928.
MLA	Tang, Jian-Hong,et al."Resistive memory devices based on a triphenylamine-decorated non-precious cobalt(II) bis-terpyridine complex".CHEMICAL COMMUNICATIONS 53.87(2017):11925-11928.